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    Article

    Differences in the Modification Effect in the Depth Direction on the Surface of Epoxy Resin Irradiated with Vacuum Ultraviolet Light

    We used a vacuum ultraviolet (VUV) spectrophotometer to measure the spectral transmittance of epoxy resin in the 140–220-nm region. This study used dielectric materials that are commonly used in electronic dev...

    Shinichi Endo, Yuki Ishikawa, Hina Shirakashi in Journal of Electronic Materials (2024)

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    Surface structure control and charge/discharge characteristics of bismuth anode materials by electrodeposition for magnesium-ion batteries

    Bismuth is considered one of the promising anode materials for the magnesium-ion secondary battery (MIB), but it has a short cycle life because of the sluggish diffusion of Mg2+ into the Bi anode and the slow int...

    Natsuki Narumoto, Naoki Okamoto in Journal of Materials Science: Materials in… (2021)

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    Article

    Sn Negative Electrode Consists of Amorphous Structures for Sodium ion Secondary Batteries

    Tin(Sn) and its alloys have been attracting attentions as a negative electrode material for sodium-ion secondary batteries with high theoretical capacity (Na15Sn4 ca. 847 mAh/g) and high electromotiveforce. There...

    Koki Morita, Naoki Okamoto, Takatomo Fujiyama, Takeyasu Saito, Kazuo Kondo in MRS Advances (2016)

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    Reliability of the Properties of (Pb,La)(Zr,Ti)O3 Capacitors with Non—noble Metal Oxide Electrodes stored in an H2 Atmosphere

    We fabricated ferroelectric (Pb,La)(Zr,Ti)O3 (PLZT) capacitors with Sn:In2O3 (ITO) or Pt top electrodes and investigated the ferroelectric properties of these PLZT capacitors. The shape of polarization–voltage hy...

    Yoko Takada, Naoki Okamoto, Takeyasu Saito, Kazuo Kondo, Takeshi Yoshimura in MRS Advances (2016)

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    The effect of H2 distribution in (Pb,La)(Zr,Ti)O3 capacitors with conductive oxide electrodes on the degradation of ferroelectric properties

    We fabricated ferroelectric (Pb,La)(Zr,Ti)O3 (PLZT) capacitors with Sn:In2O3 (ITO) top electrodes using chemical solution deposition. Then, the effects of a thin conductive ITO buffer layer between the Pt bottom ...

    Yoko Takada, Naoki Okamoto, Takeyasu Saito, Kazuo Kondo in MRS Online Proceedings Library (2014)

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    Article

    Aluminum-doped zinc oxide electrode for robust (Pb,La)(Zr,Ti)O3 capacitors: effect of oxide insulator encapsulation and oxide buffer layer

    Conductive aluminum-doped zinc oxide (AZO) was deposited by pulsed laser deposition as top electrodes for chemical solution deposition derived lanthanum modified lead zirconate titanate (PLZT) capacitors. Com...

    Yoko Takada, Toru Tsuji, Naoki Okamoto in Journal of Materials Science: Materials in… (2014)

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    Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3

    A H-terminated surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal–oxide–semiconductor field-effect transistor (MOSFET) using an electron beam evaporated SiO2 or Al2O3 gat...

    Takeyasu Saito, Kyung-ho Park, Kazuyuki Hirama in Journal of Electronic Materials (2011)

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    Article

    Preparation of Smooth Zinc Oxide Thin Film via Liquid Phase Reaction with Cation Additives

    ZnO thin films were deposited in a solution with Zn(NO3)2 and DMAB from 60 to 80°C. The effects of cation additives such as Mg, Ga and Al in a aqueous solution were investigated on surface morphology, crystallogr...

    Takeyasu Saito, Yoshihisa Hirata, Naoki Okamoto in MRS Online Proceedings Library (2009)

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    Article

    CaBi4Ti4O15 thin film deposition on electroplated Platinum substrates using a sol-gel method

    CaBi4Ti4O15 growth on different Platinum substrates was carried out through a sol-gel method. Higher crystallization temperature and 20% excess Bi decreased pyrochlore contents in the CaBi4Ti4O15 films. Repetitio...

    Takeyasu Saito, Yuichiro Hirota, Mariko Ooyanagi in MRS Online Proceedings Library (2009)

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    Article

    Electrical Properties of Diamond MISFETs with Submicron-Sized Gate on Boron-Doped (111) Surface

    An H-terminated-surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal insulator semiconductor field effect transistor (MISFET) using CaF2, SiO2 or Al2O3 gate insulators and ...

    Takeyasu Saito, Kyung-ho Park, Kazuyuki Hirama in MRS Online Proceedings Library (2006)

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    Article

    Epitaxial Growth of Diamond on an Iridium (100) Substrate by Microwave Plasma-Assisted Chemical Vapor Deposition

    Diamond films were grown heteroepitaxially on iridium (100) substrates by microwave plasma-assisted chemical vapor deposition (MPCVD) using methane gas as the carbon source. The iridium substrate, which was fo...

    Toshiki Tsubota, Shigenori Tsuruga, Takeyasu Saito in MRS Online Proceedings Library (1998)

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    Synthesis of ultrafine titanium diboride particles by rapid carbothermal reduction in a particulate transport reactor

    Ultrafine TiB2 powders were synthesized by rapid carbothermal reduction in a vertical tubular reactor through which the particles fell freely. The starting materials were TiO2, H3BO3 and cornstarch, which were...

    Takeyasu Saito, Tomoyuki Fukuda, Hideaki Maeda in Journal of Materials Science (1997)