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  1. No Access

    Article

    Polarity of Hexagonal GaN Grown on GaAs (111)A and (111)B Surfaces by HVPE and Movpe

    Polarity of hexagonal GaN grown by HVPE and MOVPE on GaAs (111) substrates was investigated by CAICISS (Coaxial Impact Collision Ion Scattering Spectroscopy). Both layers of HVPE GaN grown on GaAs (111) A — Ga...

    O. Takahashi, M. Namerikawa, H. Tanaka, R. Souda… in MRS Online Proceedings Library (2001)

  2. No Access

    Article

    Surface Preparation and Growth Condition Dependence of Cubic GaN Layer on (001) GaAs by Hydride Vapor Phase Epitaxy

    GaN buffer layers and thick GaN layers were grown on (001) GaAs substrates by hydride vapor phase epitaxy. The ratio of cubic to hexagonal components in the grown layer was estimated from the ratio of the inte...

    H. Tsuchiya, K. Sunaba, S. Yonemura, T. Suemasu… in MRS Online Proceedings Library (1997)

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    Article

    Microstructure Analysis of Agglomerated Epitaxial Columns of Si/PtSi/Si(111) Double Heterostructure

    Micro structures and interface structures of epitaxially grown PtSi and over-cap** Si films on Si(111) substrates prepared by MBE were studied by RHEED, HREM, SEM and XRD. An epitaxially grown Si layer on th...

    Kyung-Ho Park, Y. Kumagai, F. Hasegawa in MRS Online Proceedings Library (1993)