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  1. Chapter

    Low-Voltage Embedded-RAM Technology: Present and Future

    First, key issues for low-voltage (<1V) embedded RAMs are summarized in terms of stable operation, suppression of leakage (gate-tunneling/subthreshold) currents, and speed variation of memory cells and periphe...

    Kiyoo Itoh, Hiroyuki Mizuno in SOC Design Methodologies (2002)

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    Chapter and Conference Paper

    Low-Voltage Embedded RAMs – Current Status and Future Trends

    Low-voltage high-density embedded (e-) RAMs, focusing on RAM cells and peripheral circuits, are described. First, challenges and trends in low-voltage e-RAMs are described based on the S/N issue of RAM cells, ...

    Kiyoo Itoh, Kenichi Osada, Takayuki Kawahara in Integrated Circuit and System Design. Powe… (2004)

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    Chapter

    Ultralow-Voltage Memory Circuits

    The key design issues for ultralow-voltage (0.5–2 V) memory circuits are reviewed in terms of stable memory-cell operation, subthreshold current reduction, suppression of or compensation for design-parameter v...

    Kiyoo Itoh in Design of System on a Chip (2004)