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    Optimal growth interrupts for very high quality InGaAs(P)/InP superlattices grown by MOVPE

    The effects of different growth interrupt schemes at the compositional interfaces in 30 period InGaAs(P)/InP superlattices grown by metal-organic vapor phase epitaxy have been studied for quarternary compositi...

    G. Landgren, J. Wallin, S. Pellegrino in Journal of Electronic Materials (1992)