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  1. Article

    Open Access

    Extended Defects in SiC: Selective Etching and Raman Study

    Controlling the electrical properties of SiC requires knowledge of the nature and properties of extended defects. We have employed orthodox defect-selective etching and photo-etching methods to reveal typical ...

    J. L. Weyher, A. Tiberj, G. Nowak, J. C. Culbertson… in Journal of Electronic Materials (2023)

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  2. Article

    Low dislocation density, high power InGaN laser diodes

    We used single crystals of GaN, obtained from high-pressure synthesis, as substrates for Metalorganics Vapor Phase Epitaxy growth of violet and UV laser diodes. The use of high-quality bulk GaN leads to the de...

    Piotr Perlin, M. Leszczỹski, P. Prystawko… in MRS Internet Journal of Nitride Semiconduc… (2014)

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  3. No Access

    Article

    Homo-Epitaxial Growth on Misoriented GaN Substrates by MOCVD

    The N-side of GaN single crystals with off-angle orientations of 0°, 2°, and 4° towards the [1010] direction was used as a substrate for homo-epitaxial MOCVD growth. The highest misorientation resulted in a re...

    A. R. A. Zauner, J. J. Schermer, W. J. P. van Enckevort… in MRS Online Proceedings Library (2012)

  4. No Access

    Article

    Highly Chemical Reactive Ion Etching of Gallium Nitride

    A highly chemical reactive ion etching process has been developed for MOVPE-grown GaN on sapphire. The key element for the enhancement of the chemical property during etching is the use of a fluorine containin...

    F. Karouta, B. Jacobs, I. Moerman, K. Jacobs… in MRS Online Proceedings Library (2012)

  5. No Access

    Article

    A Spectrum Image Cathodoluminescence Study of Dislocations in Si-Doped Liquid-Encapsulated Czochralski GaAs Crystals

    Dislocations in Si-doped liquid-encapsulated Czochralski GaAs crystals have been studied by spectrum imaging cathodoluminescence. The interaction between the dislocations and the crystal matrix results in comp...

    M.A. González, O. Martínez, J. Jiménez, C. Frigeri… in Journal of Electronic Materials (2010)

  6. Article

    Homo-epitaxial growth on misoriented GaN substrates by MOCVD

    The N-side of GaN single crystals with off-angle orientations of 0°, 2°, and 4° towards the \(\left[ {10\bar 10} \right]\) dire...

    A. R. A. Zauner, J. J. Schermer… in MRS Internet Journal of Nitride Semiconduc… (2000)

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  7. Article

    Highly Chemical Reactive Ion Etching of Gallium Nitride

    A highly chemical reactive ion etching process has been developed for MOVPE-grown GaN on sapphire. The key element for the enhancement of the chemical property during etching is the use of a fluorine containin...

    F. Karouta, B. Jacobs, I. Moerman, K. Jacobs… in MRS Internet Journal of Nitride Semiconduc… (2000)

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  8. No Access

    Article

    Final polishing of Ga-polar GaN substrates using reactive ion etching

    Reactive ion etching of {0001} oriented plate-like GaN single crystals has been investigated using SiCl4:Ar:SF6 chemistry. The reactive ion etching process is highly chemical. Large anisotropy of the etching rate...

    F. Karouta, J. L. Weyher, B. Jacobs, G. Nowak, A. Presz… in Journal of Electronic Materials (1999)

  9. No Access

    Article

    A study of the dislocations in Si-doped GaAs comparing diluted Sirtl light etching, electron-beam-induced current, and micro-Raman techniques

    Impurity atmospheres around dislocations have been studied in n-type Si-doped liquid encapsulated Czochralski (LEC) GaAs substrates by micro-Raman spectroscopy, diluted Sirtl-like etching with light (DSL) method,...

    P. Martín, J. Jiménez, C. Frigeri, L. F. Sanz… in Journal of Materials Research (1999)

  10. No Access

    Article

    Characterization of GaAs solar cells made by ion implantation and rapid thermal annealing using selective photoetching

    Shallow n-p GaAs solar cells have been made by implantation of Si into Zn-doped (p-type) GaAs substrates followed by rapid thermal annealing. The structure of the GaAs crystal has been determined by the DSL photo...

    W.G.J.H.M. van Sark, J. L. Weyher, L. J. Giling… in Journal of Materials Research (1990)

  11. No Access

    Article

    Influence of the Surface Depletion Layer on the Photoetching Rate at Growth Striations in LEC GaAs

    Quantitative energy-dependent EBIC measurements have been used to calibrate the photoetching rate in HF-CrO3 aqueous solutions (DSL method: Diluted Sirtl-like etching with the use of Light) as a function of dopan...

    C. Frigeri, J. L. Weyher, L. Zanotti in MRS Online Proceedings Library (1988)

  12. No Access

    Article

    Microdefects in sulphur doped GaAs

    G. M. Pennock, F. W. Schapink, J. L. Weyher in Journal of Materials Science Letters (1988)

  13. No Access

    Article

    Influence of Structural and Electrical Characteristics of Extended Defects on GaAs Field Effect Transistors

    The paper presents a systematic study of grown-in and process-induced defects on LEC GaAs substrates. Defects have been revealed by photoetching the wafers with diluted Sirti-like solutions after various proce...

    M. Van Hove, W. De Raedt, M. De Potter, M. Van Rossum… in MRS Online Proceedings Library (1987)

  14. No Access

    Chapter and Conference Paper

    Influence of Defects in Substrates on the Structure of Epitaxial GaAs — Layers Grown by MOCVD

    A systematic study has been performed on the relation between defect structure in substrates and epitaxial layers of GaAs grown by MOCVD. A number of (001) oriented HB and LEC grown GaAs substrates which conta...

    J. L. Weyher, J. van de Ven… in Seventh E.C. Photovoltaic Solar Energy Con… (1987)