Abstract
Reactive ion etching of {0001} oriented plate-like GaN single crystals has been investigated using SiCl4:Ar:SF6 chemistry. The reactive ion etching process is highly chemical. Large anisotropy of the etching rate and of the morphology has been established on (000\(\bar 1\)) N-polar and (0001) Ga-polar sides of the GaN crystals, with remarkably higher rate on the N-polar side. Atomic force microscopy measurements have shown smooth surface and good polishing effect obtained on Ga-polar side, while N-polar surface exhibits an increased roughness of a factor of 10 after RIE.
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M. Schauler, F. Eberhard, C. Kirchner, V. Schwelger, A. Pelzmann, M. Kamp, K.J. Ebeling, F. Bertram, T. Riemann, J. Christen, P. Prystawko, M. Leszczynski, I. Grzegory, and S. Porowski, Appl. Phys. Lett. 74, 1123 (1999).
P. Prystawko, M. Leszczynski, B. Beamount, P. Gibart, E. Frayssinet, and W. Knap, Phys. Stat. Sol. B 210, 437 (1998).
F. Karouta, B. Jacobs, P. Vreugdewater, N.G.H. v. Melick, O. Schoen, H. Protzmann, and M. Heuken, Electrochem. and Solid State Lett. 2, 240 (1999).
F. Karouta, B. Jacobs, O. Schoen, and M. Heuken, accepted for publication in Physica Status Solidi.
S. Porowski, J. Cryst. Growth 166, 583 (1996).
H.V. Jansen, Ph.D. thesis (Enschede, Netherlands: University of Twente, 1996), pp. 3–1.
J.L. Weyher, A.R.A. Zauner, P.D. Brown, F. Karouta, A. Wysmolek, P.R. Hageman, and S. Porowski, accepted for publication in Physica Status Solidi.
J.L Weyher, S. Müller, I. Grzegory, and S. Porowski, J. Cryst. Growth 182, 17 (1997).
J.L. Weyher, P.D. Brown, A.R.A. Zauner, S. Müller, C.B. Boothroyd, D.T. Foord, P.R. Hageman, C.J. Humphreys, P.K. Larsen, I. Grzegory, and S. Porowski, J. Cryst. Growth 204, 419 (1999).
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Karouta, F., Weyher, J.L., Jacobs, B. et al. Final polishing of Ga-polar GaN substrates using reactive ion etching. J. Electron. Mater. 28, 1448–1451 (1999). https://doi.org/10.1007/s11664-999-0139-2
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DOI: https://doi.org/10.1007/s11664-999-0139-2