Skip to main content

and
  1. No Access

    Article

    Atomic force microscopy investigations on nanoindentation impressions of some metals: effect of piling-up on hardness measurements

    In the indentation test, the hardness and the elastic modulus depend strongly on the estimate of the indenter-material contact area at peak load. However, many elastic–plastic behaviours such as elastic recove...

    I. Jauberteau, M. Nadal, J. L. Jauberteau in Journal of Materials Science (2008)

  2. No Access

    Article

    High Reactivity of CH2 Radical in an AR–CH4 Post-Discharge

    This work is devoted to the study of the reactivity of CH 2 radical in the post-discharge of an Ar–CH 4 microwave plasma. These radicals are selectively produced using the energy transfer reaction between argon ...

    J. L. Jauberteau, L. Thomas, J. Aubreton in Plasma Chemistry and Plasma Processing (1998)

  3. No Access

    Article

    Characterization of an argon-hydrogen microwave discharge used as an atomic hydrogen source. Effect of hydrogen dilution on the atomic hydrogen production

    This work is devoted to the study of an argon-hydrogen microwave plasma used as an atomic hydrogen source. Our attention has focused on the effect of the hydrogen dilution in argon on atomic hydrogen productio...

    L. Thomas, J. L. Jauberteau, I. Jauberteau in Plasma Chemistry and Plasma Processing (1997)

  4. No Access

    Article

    Spectroscopic study of a D.C. discharge in an argon-silane-nitrogen gas mixture under silicon nitride thin film deposition conditions

    A detailed experimental investigation of a D.C. discharge in an argon-silanenitrogen gas mixture is undertaken using mainly spatially resolved spectroscopy. Discharge parameters are studied as functions of the...

    J. L. Jauberteau, D. Duchesne, C. Girault in Plasma Chemistry and Plasma Processing (1990)

  5. No Access

    Article

    Deposition of silicon nitride thin films by reaction of SiH4 in a nitrogen post-discharge

    Silicon nitride thin films are deposited on silicon wafers at room temperature when silane gas is injected in a nitrogen flowing post-discharge. Reactive processes involving siane molecules and long-lifetime n...

    J. L. Jauberteau, D. Conte, M. I. Baraton in Plasma Chemistry and Plasma Processing (1990)