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  1. No Access

    Article

    Electrical characterization of 4H-SiC metal–oxide–semiconductor structure with Al2O3 stacking layers as dielectric

    Interface defects and oxide bulk traps conventionally play important roles in the electrical performance of SiC MOS device. Introducing the Al2O3 stack grown by repeated anodization of Al films can notably lower ...

    P. K. Chang, J. G. Hwu in Applied Physics A (2018)

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    Article

    Investigation of interface property in Al/SiO2/n-SiC structure with thin gate oxide by illumination

    The reverse tunneling current of Al/SiO2/n-SiC structure employing thin gate oxide is introduced to examine the interface property by illumination. The gate current at negative bias decreases under blue LED illum...

    P. K. Chang, J. G. Hwu in Applied Physics A (2017)

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    Article

    Direct indication of lateral nonuniformities of MOS capacitors from the negative equivalent interface trap density based on charge-temperature technique

    The charge-temperature technique was used to investigate the oxide properties of silicon MOS capacitors fabricated on a wafer with an oxide thickness of 660 Å. The stretchout of high frequencyC — V curve of the c...

    J. G. Hwu, W. S. Wang in Applied Physics A (1986)