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Direct indication of lateral nonuniformities of MOS capacitors from the negative equivalent interface trap density based on charge-temperature technique

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Abstract

The charge-temperature technique was used to investigate the oxide properties of silicon MOS capacitors fabricated on a wafer with an oxide thickness of 660 Å. The stretchout of high frequencyC — V curve of the capacitor after a positive charge-temperature aging was proved to be due to the lateral nonuniformities of mobile charges and the increase of interface traps. The effect of lateral nonuniformitites was found to be successfully described by a model consisting of two parallelly connected nonuniform capacitors. The only parameter of importance is their area ratio, which can be easily determined by theoretical fitting. The appearance of a negative equivalent interface trap density was proposed as a new method to directly identify the existence of lateral nonuniformities.

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Authors and Affiliations

  1. Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, Republic of China

    J. G. Hwu & W. S. Wang

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  1. J. G. Hwu
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  2. W. S. Wang
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Hwu, J.G., Wang, W.S. Direct indication of lateral nonuniformities of MOS capacitors from the negative equivalent interface trap density based on charge-temperature technique. Appl. Phys. A 40, 41–46 (1986). https://doi.org/10.1007/BF00616590

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  • DOI: https://doi.org/10.1007/BF00616590

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