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Article
Rugged Thin Film Diode Liquid Crystal Switches Based on Amorphous Sinx:H
Amorphous SiNx:H thin film diodes (TFDs) can be used for pixel addressing in active matrix liquid crystal displays. They depend on the application of high electric fields to switch from the ‘off’ to the ‘on’ s...
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Article
Electrically active defects in shallow pre-amorphisedp + n junctions in silicon
An examination of shallow pre-amorphisedp + n junctions in silicon has revealed three distinct defect related phenomena determined largely by the annealing temperat...
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Article
Electrical Characterisation of Shallow Pre-Amorphised p+n Junctions in Silicon
An examination of Si+ pre-amorphised p+n structures as a function of Si+ implantation energy and solid phase epitaxial regrowth temperature has revealed three different classes of defect all of which may influenc...
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Article
Beryllium diffusion across GaAs/(Al, Ga)As heterojunctions and GaAs/AlAs superlattices during MBE growth
Beryllium diffusion during MBE growth of (Al, Ga)As layers, (Al, Ga)As/GaAs heterojunctions and GaAs/AlAs superlattices has been studied by electrochemical C-V and secondary ion mass spectrometry (SIMS) concen...
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Article
Silicon migration during MBE growth of doped (A1, Ga)As films
Silicon migration during MBE growth of (Al, Ga)As and (Al, Ga)As/GaAs or AlAs/GaAs superlattices has been studied by electrochemical C-V and secondary ion mass spectrometry (SIMS) concentration-depth profiling...
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Article
Measurement of impurities in a multi-doped sample of cadmium mercury telluride
A comparative analytical study has been carried out on a specially doped specimen of cadmium mercury telluride using different analytical techniques in order to calibrate solid source mass spectrographic (SSMS...
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Article
Quantitative measurement of impurities in gallium arsenide
The chemical concentrations of Be, O, Si, S, Zn and Sn have been measured in epitaxial layers of GaAs grown by the molecular-beam and vapour-phase techniques and also in bulk crystals grown by the Bridgman tec...
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Article
Concentrations of carbon and oxygen in indium phosphide and gallium arsenide crystals grown by the lec technique
The concentration of carbon and oxygen has been measured in various samples of LEC–grown InP and GaAs crystals using gamma photon activation analysis and mass spectrometry. The concentration of these elements ...