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  1. No Access

    Article

    The Effect of the Amorphous Silicon Alpha-Gamma Transition on Thin Film Transistor Performance

    We have investigated the effect of depositing amorphous silicon (a-Si:H) under 6h and lj (or dusty) plasma conditions on hydrogen bonding and TFT performance. By infrared measurements three deposition regimes ...

    I. D. French, S. C. Deane, D. T. Murley, J. Hewett… in MRS Online Proceedings Library (1997)

  2. No Access

    Article

    Quantitative measurement of impurities in gallium arsenide

    The chemical concentrations of Be, O, Si, S, Zn and Sn have been measured in epitaxial layers of GaAs grown by the molecular-beam and vapour-phase techniques and also in bulk crystals grown by the Bridgman tec...

    J. B. Clegg, F. Grainger, I. G. Gale in Journal of Materials Science (1980)

  3. No Access

    Article

    Direct analysis of solid cadmium mercury telluride by flameless atomic absorption using interactive computer processing

    This paper describes a solid sampling technique for the quantitative measurement of impurities in cadmium mercury telluride (CMT) in the ppb region. It has been used to calibrate the spark source mass spectrog...

    F. Grainger, I. G. Gale in Journal of Materials Science (1979)