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within J. B. Clegg Remove this filter Materials Science Remove this filter Characterization and Evaluation of Materials Remove this filter

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  1. No Access

    Article

    Rugged Thin Film Diode Liquid Crystal Switches Based on Amorphous Sinx:H

    Amorphous SiNx:H thin film diodes (TFDs) can be used for pixel addressing in active matrix liquid crystal displays. They depend on the application of high electric fields to switch from the ‘off’ to the ‘on’ s...

    B. Mc Garvey, J. B. Clegg, S. C. Deane, J. N. Sandoe… in MRS Online Proceedings Library (1997)

  2. No Access

    Article

    Electrically active defects in shallow pre-amorphisedp + n junctions in silicon

    An examination of shallow pre-amorphisedp + n junctions in silicon has revealed three distinct defect related phenomena determined largely by the annealing temperat...

    S. D. Brotherton, J. R. Ayres, J. B. Clegg, J. P. Gowers in Journal of Electronic Materials (1989)

  3. No Access

    Article

    Electrical Characterisation of Shallow Pre-Amorphised p+n Junctions in Silicon

    An examination of Si+ pre-amorphised p+n structures as a function of Si+ implantation energy and solid phase epitaxial regrowth temperature has revealed three different classes of defect all of which may influenc...

    S.D. Brotherton, J.R. Ayres, J.B. Clegg, B.J. Goldsmith in MRS Online Proceedings Library (1987)

  4. No Access

    Article

    Measurement of impurities in a multi-doped sample of cadmium mercury telluride

    A comparative analytical study has been carried out on a specially doped specimen of cadmium mercury telluride using different analytical techniques in order to calibrate solid source mass spectrographic (SSMS...

    J. B. Clegg, J. B. Mullin, K. J. Timmins… in Journal of Electronic Materials (1983)

  5. No Access

    Article

    Quantitative measurement of impurities in gallium arsenide

    The chemical concentrations of Be, O, Si, S, Zn and Sn have been measured in epitaxial layers of GaAs grown by the molecular-beam and vapour-phase techniques and also in bulk crystals grown by the Bridgman tec...

    J. B. Clegg, F. Grainger, I. G. Gale in Journal of Materials Science (1980)

  6. No Access

    Article

    Concentrations of carbon and oxygen in indium phosphide and gallium arsenide crystals grown by the lec technique

    The concentration of carbon and oxygen has been measured in various samples of LEC–grown InP and GaAs crystals using gamma photon activation analysis and mass spectrometry. The concentration of these elements ...

    G. W. Blackmore, J. B. Clegg, J. S. Hislop, J. B. Mullin in Journal of Electronic Materials (1976)