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Article
Sex Education Needs of Japanese People with Spina Bifida: Relation to Participants’ Demographics
The purpose of this study was to determine the sex education needs of people with spina bifida through their responses to a questionnaire. The questionnaire was disseminated to people with spina bifida between...
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Article
Open AccessPeer group-based online intervention program to empower families raising children with disabilities: protocol for a feasibility study using non-randomized waitlist-controlled trial
Families raising children with disabilities assume risks to their health and lives. Therefore, it is necessary to support these families to improve family empowerment, which is the ability of these families to...
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Article
Open AccessVisualization of the morphology and mode of occurrence of Cenomanian rudists within a drillcore by X-ray CT scanning and 3D modeling
Rudists are a group of bizarrely shaped marine bivalves that lived in the Tethys Ocean from the Late Jurassic to the latest Cretaceous. They are morphologically variable, including snail-like, cup-like, and ho...
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Article
Open AccessOptical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition
We have characterized highly conductive Si-doped GaN films with a high electron mobility of 112 cm2V−1s−1 at an electron concentration of 2.9 × 1020 cm−3, prepared using pulsed sputtering deposition (PSD). With a...
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Article
The effects of a participatory structured group educational program on the development of CKD: a population-based study
The type of lifestyle guidance that is effective for preventing development of chronic kidney disease (CKD) is unknown. Here, we aim to investigate the effects of a participatory structured group education (SG...
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Article
Open AccessThe effects of meteoric diagenesis on the geochemical composition and microstructure of Pliocene fossil Terebratalia coreanica and Laqueus rubellus brachiopod shells from northeastern Japan
Stable carbon (δ13C) and oxygen isotope (δ18O) compositions of fossil brachiopod shells can be used to interpret paleoclimatic and paleoceanographic conditions. However, the initial isotopic composition of the li...
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Article
Open AccessAlN/InAlN thin-film transistors fabricated on glass substrates at room temperature
In this study, InAlN was grown on glass substrates using pulsed sputtering deposition (PSD) at room temperature (RT) and was applied to thin-film transistors (TFTs). The surface flatness of the InAIN films was...
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Article
Open AccessPulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO
m-Plane GaN and InGaN films were grown on m-plane ZnO substrates at ~350 °C by pulsed sputtering deposition. It was found that the critical thickness of the m-plane GaN films grown on ZnO...
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Article
Open AccessFabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils
GaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient solid-state light sources capable of replacing conventional incandescent and fluorescent lamps. However, their applications ...
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Article
Open AccessFabrication of InGaN thin-film transistors using pulsed sputtering deposition
We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO2, which ena...
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Chapter
Feasibility of Fabricating Large-Area Inorganic Crystalline Semiconductor Devices
Generally, group III–V compound semiconductor devices are believed to exhibit high performance; however, their applications are limited because of their high fabrication costs. This problem primarily stems fro...
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Article
Open AccessFabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering
InGaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient light sources capable of replacing incandescent bulbs. However, applications of InGaN LEDs are limited to small devices be...
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Article
Open AccessField-effect transistors based on cubic indium nitride
Although the demand for high-speed telecommunications has increased in recent years, the performance of transistors fabricated with traditional semiconductors such as silicon, gallium arsenide and gallium nitr...
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Article
A novela-Si : H solar cell designed by two-dimensional device simulation
The performance of a novel hydrogenated amorphous silicon (a-Si : H) solar cell that utilizes the field effect (field effect solar cell (FESC)) has been investigated theoretically. The analysis has been done for ...
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Article
Device simulation and fabrication of field effect solar cells
The performance of a novel hydrogenated amorphous silicon (a-Si : H) solar cell which utilizes the field effect solar cell (FESC) has been investigated both theoretically and experimentally. The theoretical analy...
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Article
Electrical characteristics of low temperature-Al0.3Ga0.7As
In this work, we present electrical characterizations of n+ GaAs/low temperature (LT)-Al0.3Ga0.7As/n+ GaAs resistor structures in which the LT layers are grown at nominal substrate temperatures of 250 and 300°C. ...
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Article
Application of low temperature GaAs to GaAs/Si
Low Temperature grown GaAs (LT-GaAs) was incorporated as a buffer layer for GaAs on Si (GaAs/Si) and striking advantages of this structure were confirmed. The LT-GaAs layer showed high resistivity of 1.7 × 107 ω-...
