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Device simulation and fabrication of field effect solar cells

  • Computer Aided Design Of Materials
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Abstract

The performance of a novel hydrogenated amorphous silicon (a-Si : H) solar cell which utilizes the field effect solar cell (FESC) has been investigated both theoretically and experimentally. The theoretical analysis has been done for bothp- andn-channel FESCs by employing a two-dimensional device simulator which is based on current continuity and Poisson equations. The calculated performance is compared with that of conventional (p-i-n)a-Si : H solar cells. The calculation demonstrated that bothn-channel andp-channel FESCs could improve the conversion efficiency by as much as 50%.

In order to check the reliability of simulation, the transport properties of intrinsica-Si : H film and thin film transistor (TFT) have also been calculated and compared with the experimentally obtained characteristics. Experimental verification of TFT and FESC has been attempted by using MgO anda-SiN : H as dielectric layer materials. Preliminary results are presented.

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References

  • Fujioka H, Oshima M, Hu C, Matsuki N, Miyazaki K and Koinuma H 1998J. Non-Cryst. Solids 227–230 1287

    Article  Google Scholar 

  • Hall R N 1952Phys. Rev. 87 387

    Article  CAS  Google Scholar 

  • Hezel R and Schörner R 1981J. Appl. Phys. 52 3076

    Article  CAS  Google Scholar 

  • Koinuma H, Fujioka H, Hu C, Koida T and Kawasaki M 1996Mater. Res. Soc. Symp. Proc. 426 95

    Google Scholar 

  • Kuwano Y, Fukatsu T, Imai T, Ohnishi M, Nishiwaki H and Tsuda S 1981Jpn J. Appl. Phys. supp.20 20

    Article  Google Scholar 

  • Piller H 1985Handbook of optical constants of solids (Academic Press Inc.)

  • Shaw T and Hack M 1988J. Appl. Phys. 6419 457

    Google Scholar 

  • Tsukada T 1991Digest 49th annual device research conf. (Colorado: IEEE Electron Devices Society)IA-3

    Book  Google Scholar 

Download references

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Authors and Affiliations

  1. Ceramic Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama-shi, 226-8503, Kanagawa, Japan

    Kaori Miyazaki, Nobuyuki Matsuki, Hiroyuki Shinno, Hiroshi Fujioka, Masaharu Oshima & Hideomi Koinuma

  2. Department of Applied Chemistry, The University of Tokyo, 7-3-1 Hongou Bunkyo-ku, 113-8656, Tokyo, Japan

    Hiroshi Fujioka & Masaharu Oshima

Authors
  1. Kaori Miyazaki
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  2. Nobuyuki Matsuki
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  3. Hiroyuki Shinno
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  4. Hiroshi Fujioka
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  5. Masaharu Oshima
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  6. Hideomi Koinuma
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Miyazaki, K., Matsuki, N., Shinno, H. et al. Device simulation and fabrication of field effect solar cells. Bull Mater Sci 22, 729–733 (1999). https://doi.org/10.1007/BF02749993

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  • DOI: https://doi.org/10.1007/BF02749993

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