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Chapter and Conference Paper
Weakly Supervised Minirhizotron Image Segmentation with MIL-CAM
We present a multiple instance learning class activation map (MIL-CAM) approach for pixel-level minirhizotron image segmentation given weak image-level labels. Minirhizotrons are used to image plant roots in situ
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Article
Root identification in minirhizotron imagery with multiple instance learning
In this paper, multiple instance learning (MIL) algorithms to automatically perform root detection and segmentation in minirhizotron imagery using only image-level labels are proposed. Root and soil characteri...
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Article
The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors
E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors (HFETs) of various sizes were fabricated, and their parasitic source resistance (RS) was measured. The measurement results showed that RS varied gre...
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Chapter and Conference Paper
An Analysis of Hotel Management Business Strategy Research Under the Background of Tourism Boom Under the Correlation Algorithm
With the continuous improvement of the economy and people’s living standard, people pay more and more attention to the enjoyment of life, and going out for tourism has become an important way of leisure and en...
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Chapter and Conference Paper
Influence of Asymmetric Spacer Layers on Resonant Tunneling Diodes
Resonant Tunneling Diodes (RTD) is one of the most promising candidates for room temperature terahertz oscillators. In order to increase the upper limit of radiation frequency in RTD terahertz oscillators, pea...
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Article
Polarization Properties in AlGaN/GaN HEMT-Array with a Shifted Gate
We describe the plasmon resonances of AlGaN/GaN HEMT-array with a shifted gate at THz frequencies. By altering gate voltage and gate length, we obtained absorption spectra at different gate positions using the...
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Article
Polarization Properties in GaN Double-Channel HEMTs at Mid-Infrared Frequencies
The polarization properties of grating-gate GaN-based high electron mobility transistors in the mid-infrared region have been investigated. However, due to the lack of research on the absorption characteristic...