Abstract
We describe the plasmon resonances of AlGaN/GaN HEMT-array with a shifted gate at THz frequencies. By altering gate voltage and gate length, we obtained absorption spectra at different gate positions using the Drude dispersion to model the conductive channel layer. We observed that the asymmetry of the device’s gate position has no effect on the first-order mode of absorption but significantly impacts the second-order or higher-order modes. Through the electric field distribution, it can be found that in the first-order mode, different gate positions do not affect the electric field distribution. But in higher-order modes, when the gate is close to the source or drain, the 2D plasmons in the gated region will couple with the ungated 2D plasmons in the source and drain regions. In our simulation, the asymmetric gate position will have a higher absorption peak in the high-order mode. At the same time, the asymmetric gate structure under high-order mode can also reach higher modulation depth. The studies of these characteristics may have promising applications including high-responsivity quantum-dot THz detection, THz modulator, and other electrically tunable THz devices.
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Funding
This work was funded by the National Natural Science Foundation of China (Grant No. 92163204), Youth Innovation Promotion Association CAS (Grant No. 2020321), National Natural Science Foundation of China (Grant No. 61904192), and Fundamental Research Funds for the Central Universities (Grant No. WK5290000003).
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RX did the main work and drafted the manuscript. PZ made suggestions for revising the content of the article. GY worked on the calculation method of the simulation model and theoretical formula derivation. HG polished the manuscript. JZ analyzed the data. AY worked on the simulation and proposed the initial set up. SD visualized the data. ZZ supported the funding of this research. XZ participated in the discussion and put forward a lot of useful suggestions. BZ thoughtfully guided the research direction and research content.
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**ng, R., Zhang, P., Guo, H. et al. Polarization Properties in AlGaN/GaN HEMT-Array with a Shifted Gate. Plasmonics (2024). https://doi.org/10.1007/s11468-024-02195-7
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DOI: https://doi.org/10.1007/s11468-024-02195-7