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  1. No Access

    Article

    Polarization Properties in GaN Double-Channel HEMTs at Mid-Infrared Frequencies

    The polarization properties of grating-gate GaN-based high electron mobility transistors in the mid-infrared region have been investigated. However, due to the lack of research on the absorption characteristic...

    Runxian **ng, Hongyang Guo, Guohao Yu, Jiaan Zhou, An Yang, Shige Dai… in Plasmonics (2024)

  2. No Access

    Article

    Polarization Properties in AlGaN/GaN HEMT-Array with a Shifted Gate

    We describe the plasmon resonances of AlGaN/GaN HEMT-array with a shifted gate at THz frequencies. By altering gate voltage and gate length, we obtained absorption spectra at different gate positions using the...

    Runxian **ng, ** Zhang, Hongyang Guo, Guohao Yu, Jiaan Zhou, An Yang… in Plasmonics (2024)

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    Article

    The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors

    E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors (HFETs) of various sizes were fabricated, and their parasitic source resistance (RS) was measured. The measurement results showed that RS varied gre...

    Guangyuan Jiang, Yan Liu, Zhaojun Lin, Guohao Yu, Baoshun Zhang… in Applied Physics A (2021)