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  1. No Access

    Article

    Lasing in direct-bandgap GeSn alloy grown on Si

    Lasing is experimentally demonstrated in a direct bandgap GeSn alloy, grown directly onto Si(001). The authors observe a clear lasing threshold as well as linewidth narrowing at low temperatures.

    S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica… in Nature Photonics (2015)

  2. No Access

    Chapter and Conference Paper

    Investigation of the local crystal lattice parameters in SiGe nanostructures by convergent-beam electron diffraction analysis

    Nanostructured SiGe material consisting of quantum wells, superlattices and quantum dots are promising candidates for fast optoelectronic devices. A main topic in the research of these nanostructures is the de...

    E. Ruh, E. Mueller, G. Mussler… in EMC 2008 14th European Microscopy Congress… (2008)