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  1. Article

    Open Access

    Coherent ultrafast spin-dynamics probed in three dimensional topological insulators

    Topological insulators are candidates to open up a novel route in spin based electronics. Different to traditional ferromagnetic materials, where the carrier spin-polarization and magnetization are based on th...

    F. Boschini, M. Mansurova, G. Mussler, J. Kampmeier, D. Grützmacher… in Scientific Reports (2015)

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  2. No Access

    Article

    Lasing in direct-bandgap GeSn alloy grown on Si

    Lasing is experimentally demonstrated in a direct bandgap GeSn alloy, grown directly onto Si(001). The authors observe a clear lasing threshold as well as linewidth narrowing at low temperatures.

    S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica… in Nature Photonics (2015)

  3. No Access

    Chapter and Conference Paper

    Investigation of the Local Ge Concentration in Si/SiGe Multi-QW Structures by CBED Analysis and FEM Calculations

    The local Ge concentration in Si/SiGe multiquantum well structures was investigated by CBED analysis. Series of bright field CBED patterns were taken across the quantum wells using the [340]-zone axis in STEM ...

    E Ruh, G Mussler, E Müller, D Grützmacher in Microscopy of Semiconducting Materials 2007 (2008)

  4. No Access

    Chapter and Conference Paper

    Investigation of the local crystal lattice parameters in SiGe nanostructures by convergent-beam electron diffraction analysis

    Nanostructured SiGe material consisting of quantum wells, superlattices and quantum dots are promising candidates for fast optoelectronic devices. A main topic in the research of these nanostructures is the de...

    E. Ruh, E. Mueller, G. Mussler… in EMC 2008 14th European Microscopy Congress… (2008)