Abstract
Nanostructured SiGe material consisting of quantum wells, superlattices and quantum dots are promising candidates for fast optoelectronic devices. A main topic in the research of these nanostructures is the development of suitable configurations in order to tune the band structure for the desired optoelectronic applications. For that purpose strain conditions and local material composition within the nanostructures and especially at their interfaces have to be precisely known on an atomic scale.
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We kindly acknowledge fruitful discussions with Karsten Tillmann, FZ Jülich, Hans Sigg, PSI and René Monnier, ETHZ
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Ruh, E., Mueller, E., Mussler, G., Gruetzmacher, D. (2008). Investigation of the local crystal lattice parameters in SiGe nanostructures by convergent-beam electron diffraction analysis. In: Luysberg, M., Tillmann, K., Weirich, T. (eds) EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-85156-1_113
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DOI: https://doi.org/10.1007/978-3-540-85156-1_113
Publisher Name: Springer, Berlin, Heidelberg
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