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  1. No Access

    Living Reference Work Entry In depth

    Oxygen Impurity in Crystalline Silicon

    Oxygen belongs to the most important impurities in many types of solar silicon. Interstitial oxygen is already incorporated in a supersaturated state during crystal growth. Subsequent thermal treatment during ...

    G. Kissinger in Handbook of Photovoltaic Silicon

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    Reference Work Entry In depth

    Oxygen Impurity in Crystalline Silicon

    Oxygen belongs to the most important impurities in many types of solar silicon. Interstitial oxygen is already incorporated in a supersaturated state during crystal growth. Subsequent thermal treatment during ...

    G. Kissinger in Handbook of Photovoltaic Silicon (2019)

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    Article

    Radially non-uniform interaction of nitrogen with silicon wafers

    Reproducible and pronounced ring-like structures have been revealed on both sides of commercial grade wafers after certain regimes of annealing in pure nitrogen atmosphere at 1200 °C. To minimize residual oxyg...

    V. Akhmetov, G. Kissinger, A. Fischer… in Journal of Materials Science: Materials in… (2008)

  4. No Access

    Article

    SiGe Heteroepitaxy for High Frequency Circuits

    We have determined the process capability of Low Pressure (Rapid Thermal) Chemical Vapor Deposition (LP(RT)CVD) of epitaxial Si/SiGe/Si stacks for heterojunction bipolar transistors (HIBTs). The transistor par...

    B. Tillack, D. Bolze, G. Fischer, G. Kissinger, D. Knoll… in MRS Online Proceedings Library (1998)

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    Chapter

    On the Impact of Grown-in Silicon Oxide Precipitate Nuclei on Silicon Gate Oxide Integrity

    Small point defect clusters grown-in during Czochralski (Cz) crystal pulling can have an important impact on gate oxide integrity (GOI) for present day high quality silicon substrates. A pronounced effect of t...

    J. Vanhellemont, G. Kissinger, K. Kenis… in Early Stages of Oxygen Precipitation in Si… (1996)

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    Article

    Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

    Stepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron micro...

    G. Kissinger, T. Morgenstern, G. Morgenstern… in MRS Online Proceedings Library (1995)

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    Article

    On the Recombination Activity of Oxygen Precipitation Related Lattice Defects in Silicon

    The recombination activity of oxygen precipitation related lattice defects in p- and n-type silicon is studied with photoluminescence (PL) and microwave absorption (MWA) techniques. A direct correlation is obs...

    J. Vanhellemont, A. Kaniava, M. Libezny, E. Simoen… in MRS Online Proceedings Library (1995)

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    Article

    Cu precipitation in oxidized wafers with and without a GexSi1−x heteroepitaxial layer

    Copper silicide precipitation in Czochralski silicon influenced by the existence of a GexSi1−x heteroepitaxial layer has been studied. Samples with and without a 100 nm Ge0.016Si0.984 heteroepitaxial layer were a...

    G. Kissinger, G. Morgenstern, H. Richter in Journal of Materials Research (1993)

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    Article

    How CVD SI/GE Layer Growth is Controlled by Each one of the Reaction gas Components

    Applying the previously derived "Three-Partial-Rates" model, CVD-Si/Ge-thin film growth and composition is described as influenced by the partial pressures of silane, germane, and hydrogen chloride. The effect...

    H. Kühne, G. Kissinger, P. Zaumseil, S. Hinrich… in MRS Online Proceedings Library (1992)