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  1. No Access

    Article

    32nm Node Highly Reliable Cu/Low-k Integration Technology with CuMn Alloy Seed

    This paper introduces a highly reliable Cu interconnect technology at the 32 nm node with CuMn alloy seed. A CuMn alloy liner seed process combined with a non-gouging liner has been integrated into the minimum...

    Shaoning Yao, Vincent McGahay, Matthew S. Angyal… in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Effect of Dielectric Cap** Layer on TDDB Lifetime of Cu Interconnects in SiOF

    In this study, intralevel dielectric breakdown is studied for copper interconnects in an SiOF dielectric, capped with either SiN or SiCN. The leakage current is higher and the failure time of dielectric breakd...

    Jeff Gambino, Fen Chen, Steve Mongeon, Phil Pokrinchak… in MRS Online Proceedings Library (2009)

  3. No Access

    Article

    From Process Assumptions to Development to Manufacturing

    A tool has been developed that can be used to characterize or validate a BEOL interconnect technology. It connects various process assumptions directly to electrical parameters including resistance. The resist...

    Theo Standaert, Allen Gabor, Andrew Simon, Anthony Lisi… in MRS Online Proceedings Library (2008)

  4. No Access

    Article

    Improved Electromigration Lifetime for Copper Interconnects using Tantalum Implant

    In this study, a novel method is explored for improving the electromigration lifetime of Cu wires, using Ta implantation into Cu. For high implant doses (2E15 cm−2), the electromigration lifetime is improved by o...

    Jeff Gambino, Timothy D. Sullivan, Jason Gill, Fen Chen… in MRS Online Proceedings Library (2007)

  5. No Access

    Article

    Thermal Oxidation of Ni and Co Alloys Formed by Electroless Plating

    The thermal oxidation of Co alloy and Ni alloy thin films on top of Cu, has been studied as a function of film composition. Four different alloys were studied; CoWP, CoWB, CoMoB, and NiMoB. For the Co alloys, ...

    Jeff Gambino, Igor Ivanov, Steve Mongeon, Ed Adams… in MRS Online Proceedings Library (2006)

  6. No Access

    Article

    The Mechanical Properties of Common Interlevel Dielectric Films and Their Influences on Aluminum Interconnect Extrusions

    Knowledge of the mechanical properties of interlevel dielectric films and their impact on sub-micron interconnect reliability is becoming more and more important as critical dimensions in ULSI circuits are sca...

    Fen Chen, Baozhen Li, Timothy D. Sullivan… in MRS Online Proceedings Library (1999)

  7. No Access

    Article

    Characterization of Metal/AlxIn1−xN Interface Thermal Stability and Electrical Properties

    The interfaces between metals and semiconductors are very crucial to the performance and reliability of solid-state devices. At the moment information on the interfaces between metals and group III-nitride sem...

    Guohua Qiu, Fen Chen, J. O. Olowolafe, C. P. Swann… in MRS Online Proceedings Library (1996)