Abstract
This paper introduces a highly reliable Cu interconnect technology at the 32 nm node with CuMn alloy seed. A CuMn alloy liner seed process combined with a non-gouging liner has been integrated into the minimum-pitch wiring level. Stress migration fails with CuMn seed at plate-below-via structures were shut down by a non-gouging liner process. Integration with gouging liner and non-gouging liner is compared, and results of interaction with CuMn seed are discussed in this paper.
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Yao, S., McGahay, V., Angyal, M.S. et al. 32nm Node Highly Reliable Cu/Low-k Integration Technology with CuMn Alloy Seed. MRS Online Proceedings Library 1335, 602 (2011). https://doi.org/10.1557/opl.2011.1261
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DOI: https://doi.org/10.1557/opl.2011.1261