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  1. No Access

    Article

    Low-Temperature, High-Quality Silicon Dioxide Thin Films Deposited Using Tetramethylsilane (TMS)

    Silicon dioxide thin films have been deposited at temperatures from 40°C to 250°C by plasma enhanced chemical vapor deposition (PECVD) using tetramethylsilane (TMS) as the silicon containing precursor. The pro...

    D. M. Reber, S. J. Fonash in MRS Online Proceedings Library (1998)

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    Article

    A Comprehensive Study of Plasma Enhanced Crystallization of a-Si:H Films on Glass

    An extensive study is reported here on plasma enhanced crystallization of a-Si:H films on glass. Both electron cyclotron resonance (ECR) helium plasma exposures and ECR oxygen plasma exposures were investigate...

    Aiguo Yin, Stephen J. Fonash, D. M. Reber, Y. M. Li… in MRS Online Proceedings Library (1994)