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Low-Temperature, High-Quality Silicon Dioxide Thin Films Deposited Using Tetramethylsilane (TMS)

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Abstract

Silicon dioxide thin films have been deposited at temperatures from 40°C to 250°C by plasma enhanced chemical vapor deposition (PECVD) using tetramethylsilane (TMS) as the silicon containing precursor. The properties of the PECVD TMS oxides (PETMS-Oxs) were analyzed with Fourier Transform Infrared (FTIR) transmission spectroscopy, BOE and P-etch rates and both current-voltage (I-V) and capacitance-voltage (C-V) electrical characterization. At both 130 °C and 250 °C, deposition conditions were identified which formed high quality as-deposited oxide films. Under the best conditions, unannealed Al/PETMS-Ox/c-Si capacitor structures displayed flat band voltages of Vfb = -2.5 V and breakdown fields (Vbd) in excess of 8 MV/cm. These PETMS-Ox films also show low leakage current densities <10-9 A/cm2 which can be maintained up to fields in excess of 4.5 MV/cm. The PETMS oxide electrical quality and process simplicity combine to make a very attractive oxide deposition technology for low temperature, large area applications.

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Authors and Affiliations

  1. Electronic Materials and Processing Research Laboratory (EMPRL), The Pennsylvania State University, University Park, PA, 16802, USA

    D. M. Reber & S. J. Fonash

  2. Currently with Networking and Computing Systems Group, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX, 78721, USA

    D. M. Reber

Authors
  1. D. M. Reber
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  2. S. J. Fonash
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Reber, D.M., Fonash, S.J. Low-Temperature, High-Quality Silicon Dioxide Thin Films Deposited Using Tetramethylsilane (TMS). MRS Online Proceedings Library 508, 121–126 (1998). https://doi.org/10.1557/PROC-508-121

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  • DOI: https://doi.org/10.1557/PROC-508-121

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