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    Plasma Passivation Scheme for III–V Compound Semiconductor Surfaces

    Passivation of III–V compounds, especially GaAs, is still a major problem. Surface mechanisms related to stoichiometry defects (free As formation, vacancies) play an important role in the detrimental effects o...

    J. B. Theeten, S. Gourrier, P. Friedel, M. Taillepied… in MRS Online Proceedings Library (1984)