11 Result(s)
within
C. P. Swann
Materials Science
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Article
Low Thermal Budget NiSi Films on SiGe Alloys
Nickel silicides were formed on Si (100) substrates and CVD grown Si0.9Ge0.1/Si layers by low thermal budget annealing of evaporated Ni films to evaluate their utility for ultra shallow junctions. The phase forma...
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Article
A technique to reduce the contact resistance to 4H-silicon carbide using germanium implantation
The effects of implanted Ge on the resistance of nickel-metal contacts to n-type and p-type 4H-SiC are reported. The Ge was implanted with an energy of 346 keV and a dose of 1.7×1016 cm−2, and the wafer was annea...
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Article
The effect of Ta to Si ratio on magnetron sputtered Ta-Si-N thin films
The role of composition on the resistivity and thermal stability of reactively sputtered Ta-Si-N films have been studied using x-ray diffraction, Rutherford backscattering spectrometry, and sheet resistance me...
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Article
Structural, optical and electronic properties of oxidized AIN thin films at different temperatures
We report on the properties of a novel insulator, AlO:N for application in semiconductors produced by thermally oxidizing AlN thin films. The process steps were similar to those used for SiO2, creating the possib...
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Article
Low-Temperature Deposition and Characterization of AlxIn1−xN Thin Films
Thin III-V nitride semiconductors fidms are commonly prepared using metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). These methods often require high temperatures (800–1000°C) f...
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Article
Characterization of Metal/AlxIn1−xN Interface Thermal Stability and Electrical Properties
The interfaces between metals and semiconductors are very crucial to the performance and reliability of solid-state devices. At the moment information on the interfaces between metals and group III-nitride sem...
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Article
Magnetic Properties of Sputtered Fe-O and Co-O Thin Films
Fe-0 and Co-0 films were prepared by DC magnetron sputtering in a mixture of Ar and O2 gases. By varying the oxygen to argon ratio, oxide films with stoichiometry FeO, Fe3O4, α-Fe2O3, CoO and Co3O4 were produced....
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Article
Thickness Effects on the Magnetic Hysteresis of Equiatomic CoPt Films
The magnetic hysteresis behavior of crystalline Co50Pt50 films has been studied in samples with thickness in the range of 100-2000 Å. The room temperature coercivities of the as-grown films are of the order of 10...
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Article
Crystallization Behavior of Sputter Deposited Amorphous NixZr100-x, Films
Sputter deposited films of amorphous NixZr100-x, have been prepared over a wide and continuous range of compositions between x=20 and x=90 atomic percent Ni on liquid nitrogen cooled and room temperature substrat...
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Article
Solid-State Reactions in Multilayer Ni/Ti Thin Film Composites
Multilayer films, consisting of alternating layers of crystalline Ni and Ti, have been prepared by RF sputter deposition over a range of modulation wavelengths corresponding to an overall composition of Ni50Ti50....
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Article
Pixe Spectrometry as an Aid to Reconstruction of Ancient Processes of Bronze Production
The process of translating copper ore into a finished bronze involved a series of discrete steps (Fig. 1), the products and by-products of which comprise a diversity of materials. The full characterization of ...
