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    A technique to reduce the contact resistance to 4H-silicon carbide using germanium implantation

    The effects of implanted Ge on the resistance of nickel-metal contacts to n-type and p-type 4H-SiC are reported. The Ge was implanted with an energy of 346 keV and a dose of 1.7×1016 cm−2, and the wafer was annea...

    G. Katulka, K. J. Roe, J. Kolodzey, C. P. Swann… in Journal of Electronic Materials (2002)