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  1. No Access

    Article

    IV-VI Compound Semiconductor Mid-Infrared Vertical Cavity Surface Emitting Lasers Grown by MBE

    Mid-infrared vertical cavity surface emitting lasers (VCSELs) using PbSe as the active material and broadband high reflectivity Pb1−xSrxSe/BaF 2 distributed Bragg reflectors (DBR) as bottom and top mirrors were g...

    Z. Shi, G. Xu, P. J. McCann, X. M. Fang, N. Dai… in MRS Online Proceedings Library (2000)

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    Article

    High-Temperature W Diode Lasers Emitting at 3.3µm

    W lasers based on type-II antimonides were recently operated nearly to room temperature under the conditions of cw optical pum**. However, the development of electrically pumped mid-infrared lasers has not y...

    L. J. Olafsen, W. W. Bewley, I. Vurgaftman, C. L. Felix… in MRS Online Proceedings Library (2000)

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    Article

    Low threshold 3 μm interband cascade “W” laser

    We have demonstrated the operation at λ ≈ 3.0 μm of a 22-stage interband cascade laser with a “W” active region for enhanced gain. The threshold current density for a ridge structure is 170 A/cm2 at 80K, and it r...

    C. L. Felix, W. W. Bewley, E. H. Aifer, I. Vurgaftman… in Journal of Electronic Materials (1998)

  4. No Access

    Chapter

    Phase-Matched Second-Harmonic and Cascade Laser Mid-IR Sources

    High-power mid-IR coherent light sources operating either at ambient or thermoelectric cooler temperatures are required for numerous applications such as IR countermeasures and communications, remote chemical ...

    J. R. Meyer, I. Vurgaftman, L. J. Olafsen… in Intersubband Transitions in Quantum Wells:… (1998)

  5. No Access

    Article

    MID-IR Vertical Cavity Surface-Emitting Lasers

    An optically pumped mid-infrared vertical-cavity surface-emitting laser based on an active region with a “W” configuration of type-II antimonide quantum wells is reported. The emission wavelength of 2.9 μm has...

    I. Vurgaftman, W. W. Bewley, C. L. Felix, E. H. Aifer… in MRS Online Proceedings Library (1997)

  6. No Access

    Article

    Nearly room-temperature type-II quantum-well lasers at 3–4 μm

    We report optically pumped four-constituent InAs/InGaSb/InAs/AlSb type-II quantum-well lasers emitting at 3.2–4.1 μm. Lasing was observed up to 350K under pulsed operation, with a characteristic temperature T0 up...

    Chih-Hsiang Lin, P. C. Chang, S. J. Murry, D. Zhang… in Journal of Electronic Materials (1997)

  7. No Access

    Article

    IR Sources and Modulators Based on InAs/GaSb/AlSb-Family Quantum Wells

    We review recent applications of wavefunction engineering to the design of antimonide quantum heterostructures with favorable properties for infrared devices. Examples include electro-optical and all-optical modu...

    J. R. Meyer, C. L. Felix, J. I. Malin, I. Vurgaftman… in MRS Online Proceedings Library (1996)