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Nearly room-temperature type-II quantum-well lasers at 3–4 μm

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Abstract

We report optically pumped four-constituent InAs/InGaSb/InAs/AlSb type-II quantum-well lasers emitting at 3.2–4.1 μm. Lasing was observed up to 350K under pulsed operation, with a characteristic temperature T0 up to 68K at temperatures above ambient.

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Authors and Affiliations

  1. Space Vacuum Epitaxy Center, University of Houston, 77204-5507, Houston, TX

    Chih-Hsiang Lin, P. C. Chang, S. J. Murry, D. Zhang, Rui Q. Yang & S. S. Pei

  2. Code 5600, Naval Research Laboratory, 20375, Washington, DC

    J. I. Malin, J. R. Meyer, C. L. Felix, J. R. Lindle, L. Goldberg, C. A. Hoffman & E. J. Bartoli

Authors
  1. Chih-Hsiang Lin
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  2. P. C. Chang
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  3. S. J. Murry
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  4. D. Zhang
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  5. Rui Q. Yang
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  6. S. S. Pei
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  7. J. I. Malin
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  8. J. R. Meyer
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  9. C. L. Felix
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  10. J. R. Lindle
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  11. L. Goldberg
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  12. C. A. Hoffman
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  13. E. J. Bartoli
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Lin, CH., Chang, P.C., Murry, S.J. et al. Nearly room-temperature type-II quantum-well lasers at 3–4 μm. J. Electron. Mater. 26, 440–443 (1997). https://doi.org/10.1007/s11664-997-0116-6

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  • DOI: https://doi.org/10.1007/s11664-997-0116-6

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