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    Article

    Optical characterisation of a-Si:H and nc-Si:H thin films using the transmission spectrum alone

    Using the method proposed by Swanepoel (J Phys E: Sci Instrum 17:896–903, 1984), a-Si:H and nc-Si:H thin films have been successfully characterised using the transmission spectrum alone as taken in the UV–visi...

    S. Halindintwali, D. Knoesen in Journal of Materials Science: Materials in… (2007)

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    Thin-film compound phase formation at Fe–Ge and Cr–Ge interfaces

    Phase formation was studied in the Fe–Ge and Cr–Ge thin-film systems by means of Rutherford backscattering spectrometry and x-ray diffraction. In the Fe–Ge system, FeGe was the first phase to form while in the...

    O. M. Ndwandwe, C. C. Theron, T. K. Marais, R. Pretorius in Journal of Materials Research (2003)

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    Article

    Controlled Phase Formation by Using a Diffusion Barrier - The Fe-Si REACTION

    By analogy to reactive deposition epitaxy and titanium interlayer mediated epitaxy experiments, an attempt has been made to constrain the supply of reactants to the reaction interface in the solid phase reacti...

    C. C. Theron, A. Falepin, S. Degroote, J. Dekoster in MRS Online Proceedings Library (1999)