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Article
Optical characterisation of a-Si:H and nc-Si:H thin films using the transmission spectrum alone
Using the method proposed by Swanepoel (J Phys E: Sci Instrum 17:896–903, 1984), a-Si:H and nc-Si:H thin films have been successfully characterised using the transmission spectrum alone as taken in the UV–visi...
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Article
Thin-film compound phase formation at Fe–Ge and Cr–Ge interfaces
Phase formation was studied in the Fe–Ge and Cr–Ge thin-film systems by means of Rutherford backscattering spectrometry and x-ray diffraction. In the Fe–Ge system, FeGe was the first phase to form while in the...
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Article
Controlled Phase Formation by Using a Diffusion Barrier - The Fe-Si REACTION
By analogy to reactive deposition epitaxy and titanium interlayer mediated epitaxy experiments, an attempt has been made to constrain the supply of reactants to the reaction interface in the solid phase reacti...