![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Article
Open AccessA complementary role of multiparameter flow cytometry and high-throughput sequencing for minimal residual disease detection in chronic lymphocytic leukemia: an European Research Initiative on CLL study
In chronic lymphocytic leukemia (CLL) the level of minimal residual disease (MRD) after therapy is an independent predictor of outcome. Given the increasing number of new agents being explored for CLL therapy,...
-
Article
Improving efficiency and sensitivity: European Research Initiative in CLL (ERIC) update on the international harmonised approach for flow cytometric residual disease monitoring in CLL
Detection of minimal residual disease (MRD) in chronic lymphocytic leukaemia (CLL) is becoming increasingly important as treatments improve. An internationally harmonised four-colour (CLR) flow cytometry MRD a...
-
Article
X-ray diffraction study of langasite film grown by liquid phase epitaxy
-
Article
Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications
It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow...
-
Article
Characterization Of Defect Structures in 3C-SiC Single Crystals using Synchrotron White Beam X-Ray Topography
Defect structures in (111) 3C-SiC single crystals, grown using the Baikov technique, have been studied using Synchrotron White Beam X-ray Topography (SWBXT). The major types of defects include complex growth s...
-
Article
Synchrotron White Beam Topography Studies of Residual Stress in SiC Single Crystal Wafers with Epitaxial Thin Films
The residual stress in a 6H-SiC wafer with a 3C-SiC epitaxial overlayer is determined by the technique of Synchrotron white beam x-ray topography (SWBXT). The short wavelength and high energy attributes of syn...
-
Article
Characterization of Defect Structures in Lely 6H-SiC Single Crystals Using Synchrotron White Beam X-Ray Topography
Defect structures in Lely SiC single crystals have been studied using synchrotron white beam X-ray topography. Basal plane dislocations and stacking faults probably generated during post-growth cooling are cle...
-
Article
Synchrotron White Beam Topography Studies of Screw Dislocations in 6H-Sic Single Crystals
Synchrotron white beam X-ray topography, along with optical microscopy and scanning electron microscopy, has been used to characterize structural defects which are potentially detrimental to device performance...
-
Article
Computer Aided Synchrotron White Beam X-Ray Topographic Analysis of Multipolytype SiC Device Configurations
SiC device configurations comprising various polytypes have been analyzed using synchrotron white beam x-ray topography with the aid of computer simulation. Diffracted intensity maps for the various polytypes ...
-
Article
Investigation of Filamentation Damage Resulting from Electromagnetic Breakdown in Si bi-polar diodes
Synchrotron white beam X-ray topographic studies of damage induced during the R-F electromagnetic breakdown of bi-polar diodes on silicon have been carried out. Filaments associated with damage processes in re...
-
Article
Characterization of Defect Structures in SiC Single Crystals using Synchrotron X-ray Topography
Synchrotron white beam X-ray topography has been used to characterize defect structures in 6H-SiC wafers grown on (0001) seeds. Two major types of defects are observed: super screw dislocations approximately p...