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  1. Article

    Preface of EML PVSEC-25 special issue

    Byung Tae Ahn, Byungha Shin, Jihun Oh in Electronic Materials Letters (2016)

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    Article

    Control of point defects in the Cu(In,Ga)Se2 film synthesized at low temperature from a Cu/In2Se3 stacked precursor

    Low-temperature fabrication of Cu(In,Ga)Se2 (CIGS) film is essential for flexible CIGS solar cells. A large-grained CIGS film was synthesized with a Se-deficient Cu/In,Ga)2Se3 stacked precursor by reacting at 500...

    Gwang Sun Jung, Seungtae Kim, Young Min Ko, Sun Hong Moon… in Electronic Materials Letters (2016)

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    Article

    Effects of NH3 flow rate on the epitaxial growth of CoSi2 thin film using a CoN x interlayer deposited by MOCVD

    A uniform epitaxial CoSi2 layer could be grown on a Si(100) substrate by deposition of a CoN x interlayer followed by an in situ annealing process. The amorphous Si–N layer whic...

    Seung Ryul Lee, Byung Tae Ahn, Bo Soo Kang in Applied Physics A (2015)

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    Article

    Fabrication of a high-performance poly-Si thin-film transistor using a poly-Si film prepared by silicide-enhanced rapid thermal annealing process

    A 50-nm thick polycrystalline Si film was fabricated by the crystallization of anamorphous Si film using silicide-enhanced rapid thermal annealing (SERTA). The amorphous Si film was deposited on a 5-nm thick p...

    Yong Ho Yang, Kyung Min Ahn, Seung Mo Kang, Sun Hong Moon… in Electronic Materials Letters (2014)

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    Chapter

    Development of High-Efficiency Cd-Free Cu(In,Ga)Se2 Solar Cells Using Chemically Deposited ZnS Film

    A ZnS film covered completely the CIGS surface without pinholes. The thickness of the ZnS film could be controlled according to the cycle number of the CBD process. As the thickness of the ZnS film increased, ...

    Dong Hyeop Shin, Seung Tae Kim… in Materials Challenges and Testing for Manuf… (2014)

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    Article

    Fabrication of CuInSe2 Solar Cells by the Evaporation of Binary Selenide Compounds

    CuInSe2 films were prepared by the three-stage process using the evaporation of In2Se3, Cu2Se and Se. In the third stage, the depth of Cu-poor surface region was precisely adjusted by the control of the evaporati...

    Doo Youl Lee, Jae Ho Yun, Byung Tae Ahn, Kyung Hoon Yoon… in MRS Online Proceedings Library (2011)

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    Article

    Enhanced Low-Temperature Crystallization of Amorphous Si Films Using AlCl3 Vapor

    It is known that the direct contact between Al and a-Si enhances the crystallization of a-Si film. But the poly-Si films crystallized by the direct contact of Al metal film suffer the problems of rough surface...

    ** Hyung Ahn, Ji Hye Eom, Byung Tae Ahn in MRS Online Proceedings Library (2011)

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    Article

    Crystallization of Amorphous Si Thin Films Using a Viscous Ni Solution

    We prepared a viscous Ni solution by dissolving NiCl2 in 1N HCl and mixing it with propylene glycol to control the amount of Ni on Si surface. A uniform film was formed after spin coating and oven dry. The a-Si f...

    ** Hyung Ahn, Sung Chul Kim, Byung Tae Ahn in MRS Online Proceedings Library (2011)

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    Article

    In-situ Growth and Growth Kinetics of Epitaxial (100) CoSi2 Layer on (100) Si by Reactive Chemical Vapor Deposition

    Uniform epitaxial CoSi2 layers have been grown in situ on a (100) Si substrate at temperatures near 600 °C by reactive chemical-vapor deposition of cyclopentadienyl dicarbonyl cobalt, Co(η5-C5H5)(CO)2. The growth...

    Hwa Sung Rhee, Heui Seung Lee, Jong Ho Park… in MRS Online Proceedings Library (2011)

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    Article

    Silicon Field Emission Arrays Coated with CoSi2 Layer Grown by Reactive Chemical Vapor Deposition

    We prepared Si emitters coated with an MOCVD CoSi2 layer to improve the emission properties. The CoSi2 layer was grown in situ by reactive chemical vapor deposition of cyclopentadienyl dicarbonyl cobalt at 650 °C...

    Byung Wook Han, Hwa Sung Rhee, Byung Tae Ahn… in MRS Online Proceedings Library (2011)

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    Article

    Properties of Polysilicon films Oxidized in Inductively Coupled Plasma and its Effect on thin-Film Transistors

    We investigated the properties of polycrystalline silicon (poly-Si) films oxidized in inductively coupled plasma (ICP) and the characteristics of poly-Si thin film transistors (TFTs) with an ICP/LPCVD gate oxi...

    Yong Woo Choi, ** Hyung Ahn, Byung Tae Ahn in MRS Online Proceedings Library (1999)

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    Article

    Epitaxial Growth and Thermal Stability of CoSi2 Layer on (100) Si from Co-C Films without Cap** Layer

    A uniform epitaxial CoSi2 layer was grown on (100) Si substrate by rapid thermal annealing at 800°C in N2 ambient without cap** layers from an amorphous cobalt-carbon film. The amorphous cobalt-carbon film was ...

    Hwa Sung Rhee, Dong Kyun Sohn, Byung Tae Ahn in MRS Online Proceedings Library (1999)

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    Article

    Reexamination of sectional classification in far easternEuphorbia subgenusEsula (Euphorbiaceae) using morphological and phenolic data

    Reexamining the classification proposed by Hurusawa, the phylogeny of Far EasternEuphorbia subgenusEsula was analyzed using thirteen morphological and seventeen phenolic compound data. These data were analyzed in...

    Ki-Ryong Park, Byung-Tae Ahn, Kyung-Soon Lee in Journal of Plant Biology (1999)

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    Article

    Pre-Treatment Effect on Aluminum Thin Films Deposition from Cvd Using Dimethylethylamine Alane

    To study the effect of pre-treatment of substrates on the deposition behavior of Al films, the surfaces of TiN and SiO2 substrates were exposed to hydrogen plasma or Ar plasma before Al deposition. The Al films w...

    Tae Woong Jang, Hwa Sung Rhee, Byung Tae Ahn in MRS Online Proceedings Library (1998)

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    Article

    Thin-Film Transistors Fabricated With Poly-Si Films Crystallized by Microwave Annealing

    Solid phase crystallization has the advantages of low cost and excellent uniformity but the crystallization temperature is too high to use glass as a substrate. Using microwave annealing, we crystallized a-Si ...

    Yong Woo Choi, Jeong No Lee, Tae Woong Jang… in MRS Online Proceedings Library (1998)

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    Article

    Low-Temperature Crystallization of Amorphous Silicon Thin Films by Microwave Heating

    Microwave heating was utilized for the first time for solid phase crystallization of amorphous silicon films. Microwave heating lowered annealing temperature and reduced the annealing time for complete crystal...

    Jeong No Lee, Yoon Chang Kim, Yong Woo Choi… in MRS Online Proceedings Library (1997)

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    Article

    Effect of Geometric Factors on Polarization Properties of Vertical-Cavity Surface-Emitting Lasers With Tilted Pillar Structures

    We have studied the effect of geometric factors on the polarization properties of verticalcavity surface-emitting lasers with tilted pillar structures. Laser pillars with circular, square, diamond, and rectang...

    Min Soo Park, Byung Tae Ahn, Hye Yong Chu, Byueng-Su Yoo… in MRS Online Proceedings Library (1997)

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    Article

    Stabilization of Transverse Mode Emission in Vertical-Cavity Surface-Emitting Lasers by Deposition of High Refractive Index Amorphous GaAs

    We report successful application of a low-temperature-grown amorphous GaAs (a-GaAs) layer for stabilization of the fundamental transverse mode of InGaAs/GaAs vertical-cavity surface-emitting lasers. The maximu...

    Hyo-Hoon Park, Byueng-Su Yoo, Hye Yong Chu, El-Hang Lee… in MRS Online Proceedings Library (1996)

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    Article

    Copper-Enhanced Solid Phase Crystallization of Amorphous Silicon Films

    Low-temperature crystallization of amorphous Si (a-Si) films was investigated by adsorbing copper ions on the surface of the films. The copper ions were adsorbed by spincoating of Cu solution. This new process...

    Dong Kyun Sohn, Dae Gyu Moon, Byung Tae Ahn in MRS Online Proceedings Library (1996)

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    Article

    Effect of CdTe Stoichiometry on the Electrical Properties of CdTe Films

    CdTe films have been prepared by a close-spaced sublimation (CSS) process with screen-printed CdTe layers as a source. The electrical resistivity of the CdTe film deposited in O2 was about one order of magnitude ...

    Gil Yong Chung, ** Soo Song, Byung Tae Ahn in MRS Online Proceedings Library (1996)

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