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    Article

    Kinetic Study of the Competitive Growth Between θ-Al2O3 and α-Al2O3 During the Early Stages of Oxidation of β-(Ni,Pt)Al Bond Coat Systems: Effects of Low Oxygen Partial Pressure and Temperature

    An oxidation study of β-(Ni,Pt)Al commercial bond coat systems was carried by means of TGA analysis during isothermal treatments at temperatures from 1273 K to 1423 K (1000 °C to 1150 °C). The effect of oxygen pa...

    J. M. Alvarado-Orozco, R. Morales-Estrella in Metallurgical and Materials Transactions A (2015)

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    Alloying-Element Loss During High-Temperature Processing of a Nickel-Base Superalloy

    The effect of exposure at temperatures commonly used for wrought processing/heat treatment of nickel-base superalloys on the loss of alloying elements at the free surface has been determined. For this purpose,...

    S. L. Semiatin, J. M. Shank, W. M. Saurber in Metallurgical and Materials Transactions A (2014)

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    Article

    Structural Stability of Platinum-Group-Metal-Modified γ + γ′ Ni-Base Alloys

    The structural and surface stabilities of two experimental γ-Ni+γ′-Ni3Al-base alloys containing Pt or Ir were investigated. These alloys are representative of alloys currently being developed to occupy a unique d...

    A. J. Heidloff, J. Van Sluytman in Metallurgical and Materials Transactions A (2009)

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    Article

    Correlation between the Microstructure, Growth Mechanism, and Growth Kinetics of Alumina Scales on a FeCrAlY Alloy

    The microstructural development of an alumina scale formed on a model FeCrAlY alloy during oxidation at 1200 °C was characterized for up to 2000 hours of growth. Quantitative scanning electron microscopy (SEM)...

    D. Naumenko, B. Gleeson, E. Wessel in Metallurgical and Materials Transactions A (2007)

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    Article

    The deposition of aluminide and silicide coatings on γ-TiAl using the halide-activated pack cementation method

    The halide-activated pack cementation method (HAPC) was utilized to deposit aluminide and silicide coatings on nominally stoichiometric γ-TiAl. The deposition temperature was 1000°C and deposition times ranged...

    T. C. Munro, B. Gleeson in Metallurgical and Materials Transactions A (1996)