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Article
Luminescence Study of Wet Chemically Etched InP/InGaAs-Submicron-Structures
We have investigated the optical properties of wet chemically etched InP/InGaAs-wires and dots with widths between 100 nm and 10 µm for different excitation densities. We observe that the non radiative recombinat...
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Article
Final polishing of Ga-polar GaN substrates using reactive ion etching
Reactive ion etching of {0001} oriented plate-like GaN single crystals has been investigated using SiCl4:Ar:SF6 chemistry. The reactive ion etching process is highly chemical. Large anisotropy of the etching rate...
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Article
Highly Chemical Reactive Ion Etching of Gallium Nitride
A highly chemical reactive ion etching process has been developed for MOVPE-grown GaN on sapphire. The key element for the enhancement of the chemical property during etching is the use of a fluorine containin...
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Article
Passive components on AlN for application in AlGaN/GaN power amplifiers
We have investigated Coplanar Waveguide (CPW) elements on AlN for use in future AlGaN/GaN based power amplifiers. This technology becomes crucial if a via-hole technology is not available. Lines, discontinuiti...
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Article
Components for AlGaN/GaN Power Amplifiers
Ohmic contacts and Schottky contacts were made on an undoped AlGaN/GaN FET structure. Despite the high Al content (33%), we were still able to obtain a contact resistance of 0.3 ωmm. Pulsed measurements showed...
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Article
Highly Chemical Reactive Ion Etching of Gallium Nitride
A highly chemical reactive ion etching process has been developed for MOVPE-grown GaN on sapphire. The key element for the enhancement of the chemical property during etching is the use of a fluorine containin...