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  1. No Access

    Article

    On resistive switching and dielectric spectroscopy characteristics of topological insulator-based heterojunction for memory applications

    Herein, bismuth telluride (Bi2Te3) thin films thermally grown under vacuum have been integrated with p-Si in a heterojunction configuration of Au/Bi2Te3/p-Si/Al for resistive switching random-access memory (RRAM)...

    Ahmed M. Nawar, Omar H. Abd-Elkader, Ahmed M. El-Mahalawy, Lotfi Aleya in Applied Physics A (2024)

  2. No Access

    Article

    Analyzed electrical performance and induced interface passivation of fabricated Al/NTCDA/p-Si MIS–Schottky heterojunction

    In this research, the significant role of 1,4,5,8-naphthalenetetracarboxylic-dianhydride, NTCDA, thin film on the Al/p-Si barrier under different temperatures is investigated. The structural and topographical ...

    Ahmed M. Nawar, Mohamed Abd-Elsalam, Ahmed M. El-Mahalawy… in Applied Physics A (2020)

  3. Article

    Correction to: Fast processed crystalline methyl violet-6B thin films for optimizing the light-harvesting characteristics of Ag/methyl violet 6B/p-Si/Al solar cells

    In the original publication of this article the author noticed some important corrections.

    Ahmed M. Nawar in Applied Physics A (2019)

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  4. No Access

    Article

    Fast processed crystalline methyl violet-6B thin films for optimizing the light-harvesting characteristics of Ag/methyl violet 6B/p-Si/Al solar cells

    In the present work, fabrication of crystalline methyl violet 6B thin films with thickness ranging from 95 to 237 nm was aimed and revealed the thermal post-annealing roles (373 K) of structural and optical pr...

    Ahmed M. Nawar in Applied Physics A (2019)