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    Electrooptical Characterization of MWIR InAsSb Detectors

    InAs1−x Sb x material with an alloy composition of the absorber layer adjusted to achieve 200-K cutoff wavelengths in the 5-μm range has been grown. Compound-bar...

    A.I. D’Souza, E. Robinson, A.C. Ionescu, D. Okerlund in Journal of Electronic Materials (2012)