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Chapter and Conference Paper
TEM Characterization of Self-Organized (In,Ga)N Quantum Dots
(In,Ga)N/GaN quantum structures were extensively investigated in cross section by transmission electron microscopy. Both strain-sensitive diffraction contrast imaging and highangle annular dark-field imaging ...
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Chapter
Entropy Effects in the Self-Organized Formation of Nanostructures
A finite-temperature thermodynamic theory is developed for arrays of submonolayer islands in heteroepitaxial systems. It is established that the temperature dependence of the average island size at temperature...
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Chapter
ZnCdSe Quantum Structures — Growth, Optical Properties and Applications
ZnCdSe quantum structures are investigasted for the effect of exciton localisation on the potential for opto-electronic applications. The investigation on ZnCdSe quantum dots as the active material in a laser ...
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Chapter
Excitonic Composites
A new class of composite materials, excitonic composite, has been considered by the example of a collection of identical semiconductor quantum dots (QDs). The QD is modeled by a spatially confined exciton inte...
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Chapter and Conference Paper
Quantum dots for GaAs-based surface emitting lasers at 1300 nm
InGaAs quantum dots (QD's) on GaAs substrate have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for the use in vertical cavity surface emitting laser di...
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Chapter and Conference Paper
Diode lasers based on quantum dots
Semiconductor diode lasers are presented whose active medium consists of quantum dots (QDs). Laser operation is based on zero-dimensionally localized carriers. High density arrays of uniform QDs are fabricated...
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Chapter
MBE Growth of (In,Ga)As Self-Assembled Quantum Dots for Optoeletronic Applications
Quantum dot (QD) arrays are considered now to be very promising in semiconductor laser applications. Single quantum dot represents a potential quantum well in which the carrier motion is quantised in all three...
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Chapter
Atomically Abrupt Interfaces of Compound Semiconductor Heterostructures: The AlAs/GaAs Case
The structure of AlAs/GaAs/AlAs quantum well interfaces grown with 100 s interruption at each of the interfaces is investigated. Cathodoluminescence (CL) peak energy histograms, wavelength images of the excito...
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Chapter
Carrier Capture and Stimulated Emission in Quantum Wire Lasers Grown on Nonplanar Substrates
The excess carrier capture and stimulated emission processes in GaAs/AlGaAs quantum wires (QWRs) grown by organometallic chemical vapor deposition on nonplanar substrates are discussed. These crescent shaped w...
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Chapter and Conference Paper
Optical Properties of Quantum Wires Grown on Nonplanar Substrates
The structure and luminescence properties of GaAs/AlGaAs quantum wires (QWRs) grown by organometallic chemical vapor deposition on nonplanar substrates are described. These crescent-shaped QWRs, as narrow as 1...
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Chapter
High Injection Effects in GaAs/AlGaAs Quantum Wells: Spontaneous Recombination and Band-Gap Renormalization
In this paper, we report a feasible experimental approach to high injection effects in semiconductor light sources. We show that by measuring the junction voltage, the differential lifetime, and the relative o...
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Chapter
4He and 3He Calorimetric Absorption Spectroscopy: Principles and Results on InGaAs/AlInAs Quantum Wells and Fe in InP and GaAs
A novel absorption technique, Calorimetric Absorption Spectroscopy (CAS), is compared to other photothermally based spectroscopic methods. CAS is more sensitive than any other low-temperature absorption techni...
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Chapter
The Interface as a Design Tool for Modelling of Optical and Electronic Properties of Quantum Well Devices
The atomic scale crystallographic and chemical properties of interfaces between semiconductors are of decisive importance for the performance of novel generations of electronic and photonic devices and are in ...
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Chapter and Conference Paper
Visualization and Theoretical Modelling of the Atomistic Structure of Semiconductor Quantum Well Interfaces
The atomic scale crystallographic and chemical properties of interfaces between semiconductors are of decisive importance for the performance of novel generations of electronic and photonic devices and are in ...
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Chapter and Conference Paper
High Sensitivity Picosecond Optical Pulse Detection by Semiconductor Laser Amplifiers Via Cross-Correlation
A novel method to measure the temporal behaviour of ultrashort light pulses is presented. A semiconductor laser amplifier driven by short injection current pulses presents the light sensitive device in a cross...
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Chapter and Conference Paper
Recombination Heating Induced Delayed Energy Relaxation of Nonequilibrium Charge Carriers
Recombination of nonequilibrium carriers leads to an increase of the temperature of the remaining carrier gas, if the recombination rate decreases with increasing energy and/or degenerate statistics applies. T...
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Chapter and Conference Paper
Advantages of Multiple Quantum Wells with Abrupt Interfaces for Light-Emitting Devices
Continuous excitation, time resolved and time delayed cathodo- and photoluminescence experiments prove that radiative recombination from narrow GaAs (and In0.53 Ga0.47 As) quantum wells (QWs) is of excitonic char...
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Chapter and Conference Paper
SIMS Investigation of p-n Junction Quality in Ion Implanted cw Laser Annealed Silicon
It is well established that silicon samples amorphized by ion implantation can be recrystallized by cw laser annealing [1,2]. The damaged surface layer is reconstructed by laser induced solid phase epitaxy [2,...
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Chapter
Properties of Electron-Hole-Drops in Ge in Magnetic Field
In a number of semiconductors like Ge, Si, GaP and SiC1–3 a first order electronic phase transition occurs below a critical temperature in a dense system (plasma) of electrons and holes or excitons. The plasma se...
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Chapter and Conference Paper
Direct Determination of the Free Electron Mass and g-Value in GaSb
A new simple method, not restricted to high-purity materials, for direct determination of free electron mass and g-value is presented. The method involves the magnetic field- and temperature dependences of the...
