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    Movpe of InP and GaAs Based Optoelectronic Materials in a Multiwafer Production Reactor Using TBA and TBP Exclusively

    In this paper a study of the growth of GaAs and InP based materials using the alternative precursors TBAs and TBP is presented. For this purpose mass production multiple wafer reactors were employed. Both long...

    D. Schmitz, G. Lengeling, R. Beccard, H. Jürgensen in MRS Online Proceedings Library (1996)