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Time relaxation of point defects in p- and n-(HgCd)Te after ion milling

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Abstract

Time relaxation of the electrical conductivity σ(77 K) and Hall coefficient RH(77 K) of the n-type layer created by ion milling is investigated in Hg vacancy-doped, As-doped, and In-predoped p-type, and In-doped n-type Hg1−xCdxTe (0.2 < x < 0.22) samples. We show that the n-type layer is formed, and the temperature-activated relaxation occurs in all cases. The annealing at 75°C results in a gradual degradation of the converted n-type layer and a back n-to-p conversion within 8 days. The existence of a high-conducting, surface-damaged region with a high-electron density (∼1018 cm−3) and a low mobility (∼103 cm2/Vs) is confirmed, and its influence on the relaxation is studied.

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Authors and Affiliations

  1. Institute of Physics, Charles University, CZ-121 16, Prague 2, Czech Republic

    E. Belas & R. Grill

  2. Kremenchuk State Polytechnical University, 39614, Kremenchuk, Ukraine

    V. V. Bogoboyashchyy

  3. R&D Institute for Materials SRC “Carat,”, 79031, Lviv, Ukraine

    I. I. Izhnin & V. A. Yudenkov

  4. Lviv National University, 79044, Lviv, Ukraine

    A. P. Vlasov

Authors
  1. E. Belas
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  2. V. V. Bogoboyashchyy
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  3. R. Grill
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  4. I. I. Izhnin
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  5. A. P. Vlasov
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  6. V. A. Yudenkov
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Belas, E., Bogoboyashchyy, V.V., Grill, R. et al. Time relaxation of point defects in p- and n-(HgCd)Te after ion milling. J. Electron. Mater. 32, 698–702 (2003). https://doi.org/10.1007/s11664-003-0055-9

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  • DOI: https://doi.org/10.1007/s11664-003-0055-9

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