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Dark Currents of Unipolar Barrier Structures Based on Mercury Cadmium Telluride for Long-Wave IR Detectors
Two types of long-wave infrared nBn -structures based on mercury cadmium telluride grown by molecular beam epitaxy on GaAs (013) substrates have been...
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Light People: Academician Junhao Chu
The industrial revolutions of steam power, electric power and digital power have been three key steps in the development of science and technology....
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Impedance of MIS Devices Based on nBn Structures from Mercury Cadmium Telluride
Three types of nBn structures based on mercury cadmium telluride grown by molecular beam epitaxy have been fabricated. As barrier layers in nBn...
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Tuning the band gap of manganese telluride quantum dots (MnTe QDs) for photocatalysis
Laser ablation synthesis in solution (LASiS) was used to synthesize quantum dots (QDs) of manganese telluride (MnTe). Size-tuneable QDs exhibit...
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Admittance of Barrier Structures Based on Mercury Cadmium Telluride
The results of studying the admittance of unipolar barrier structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates...
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An Optical Study of Disordering in Cadmium Mercury Telluride Solid Solutions
AbstractThe disordering in cadmium mercury telluride solid solution films grown by molecular beam epitaxy on Si and GaAs substrates has been examined...
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Status and Progress of Research on HgCdTe Photovoltaic Infrared Detectors
In the field of infrared remote sensing, cadmium mercury telluride photovoltaic infrared detectors play a crucial role in the performance of the...
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Modeling of dark current in semispherical quantum dot structures for infrared photodetection
Due to its tunable heterojunction bandgap and great sensitivity to normal incident illumination, the Quantum Dot Infrared Photodetectors (QDIPs) have...
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A review on emerging materials with focus on BiI3 for room-temperature semiconductor radiation detectors
PurposeConsiderable advances in the fundamental knowledge and applications of radiation science have led to significant progress and development of...
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J–V characteristics of dark current in truncated conical quantum dot infrared photodetectors (QDIPs)
Quantum Dot Infrared Photodetector (QDIP) is one of the promising candidates for infrared photodetection due to its controllable heterojunction...
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Current-Voltage Characteristics of nBn Structures Based on Mercury Cadmium Telluride Epitaxial Films
The current – voltage characteristics of nBn structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs substrates in the temperature...
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Photothermal Ionization Spectroscopy of Mercury Vacancies in HgCdTe Epitaxial Films
The terahertz photoconductivity of narrow-gap Hg 1 – x Cd x Te alloys that originates from shallow double acceptors formed by mercury vacancies is...
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Multicolor Photodetectors
Infrared imaging has been confined to a black-and-white output format in the traditional systems. Human color perception is an extremely powerful...
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The Effect of As+ Ion Implantation and Annealing on the Electrical Properties of Near-Surface Layers in Graded-Gap n-Hg0.78Cd0.22Te Films
AbstractMercury cadmium telluride n -Hg 1 – x Cd x Te (HgCdTe) films with near-surface wide-bangap layers were grown by molecular beam epitaxy on Si(013)...
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Hg-Based Narrow Bandgap II-VI Semiconductors
This chapter deals with Hg-based II-VI compounds, which include HgS, HgSe, and HgTe. The main structural parameters of the compounds are given, and...
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In the absence of gravitas
One summer evening in August 1492, three ships—the carrack Santa María and a pair of a smaller caravels, the Pinta and the Santa Clara—put to sea...
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CdTe-Based Nanoparticles Synthesized in Solutions
This chapter considers the features of the synthesis of CdTe and CdTe-based alloy NCs in aqueous solutions. Among II-VI compounds, CdTe and ternary...
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II–VI Semiconductor-Based Nanomaterials
In this chapter, we discuss a variety of synthetic approaches to obtain II–VI semiconductor-based nanomaterials of different morphology. General...
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Thin Films of Wide Band Gap II-VI Semiconductor Compounds: Features of Preparation
The chapter describes the most common and effective methods of obtaining of II-VI semiconductor compounds (CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe) thin...
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Ternary II-VI Alloys Promising for Application in Photodetectors
In this chapter, an overview of II-VI semiconductors, especially some important ternary II-VI alloys, CdZnTe, CdHgTe, and HgZnTe, is given with more...