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Hg-Based Narrow Bandgap II-VI Semiconductors

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Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors

Abstract

This chapter deals with Hg-based II-VI compounds, which include HgS, HgSe, and HgTe. The main structural parameters of the compounds are given, and the features of the synthesis of these compounds and their chemical properties are described. The stability of properties, the nature of the chemical bond, the band diagram, and the specific properties of zero or very narrow bandgap HgSe and HgTe are also analyzed. The physical and electrophysical parameters of Hg-based compounds are given. The approaches used for their do** are considered. A description is given of possible applications of Hg-based II-VI compounds, which include various types of IR photodetectors, Hall sensors, quantum electronics, spintronic, and optoelectronic devices. Disadvantages that may limit the widespread application of Hg-based II-VI compounds are also discussed in this chapter.

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Acknowledgments

G.K. and D.N. are grateful to the State Program of the Republic of Moldova (project 20.80009.5007.02) for supporting their research.

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Authors and Affiliations

  1. Department of Physics and Engineering, Moldova State University, Chisinau, Moldova

    Ghenadii Korotcenkov & Denis L. Nika

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  1. Ghenadii Korotcenkov
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  1. Department of Physics and Engineering, Moldova State University, Chisinau, Moldova

    Ghenadii Korotcenkov

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Korotcenkov, G., Nika, D.L. (2023). Hg-Based Narrow Bandgap II-VI Semiconductors. In: Korotcenkov, G. (eds) Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors. Springer, Cham. https://doi.org/10.1007/978-3-031-19531-0_3

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