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1. A computational investigation to tune the optical gain in AlSb/InGaAsSb/AlSb type-I quantum well heterostructure

   GaSb-based type-I heterostructure exhibited low optical gain hence further investigations are needed to study the technique for tuning the optical...

   Md. Riyaj, Amit Rathi, Pushpalata in The European Physical Journal B

   Article 19 October 2022
   

2. Correlation between structural, electronic, and optical response of Ga-doped AlSb for optoelectronic applications: a first principle study

   Density functional theory is used to examine structural, electronic, and optical properties of Al _{1− x} Ga _x Sb by employing the full potential linear...

   Shafqat Nabi, Abdul Waheed Anwar, ... Babar Shahzad Khan in The European Physical Journal B

   Article 18 March 2022
   

3. AlSb/InAs Heterostructures for Microwave Transistors

   Abstract

   Features of the molecular beam epitaxy growth of the AlSb/InAs heterostructures with a high-mobility two-dimensional electron gas for...

   M. A. Sukhanov, A. K. Bakarov, K. S. Zhuravlev in Technical Physics Letters

   Article 01 February 2021
   

4. Optical gain enhancement and wavefunction confinement tuning in AlSb/InGaAsP/GaAsSb heterostructures

   Amit Kumar Singh, Rohit Singh, ... Amit Rathi in The European Physical Journal B

   Article 06 June 2021
   

5. Electroluminescence in Heterostructures GaSb/AlSb/InAsSb Due to Tunneling Mechanism of Radiative Recombination

   Abstract

   We report on the unusually large blue shift of electroluminescence spectrum with increase of the drive current at 77 K in a double-barrier...

   L. V. Danilov, M. P. Mikhailova, ... P. S. Kop’ev in Semiconductors

   Article 01 December 2020
   

6. Scattering of Charge Carriers by Impurity Ions in InAs/AlSb Heterostructure

   The mechanism of charge carrier scattering on ionized impurity atoms in an InAs/AlSb heterostructure with two filled size quantization subbands is...

   E. R. Burmistrov, M. M. Afanasova in Russian Physics Journal

   Article 14 July 2020

7. First-principles calculations to investigate structural, electronic and optical properties of In-doped aluminium antimonide alloy for optoelectronic applications

   The first Principle calculations are made to study the structural electronic and optical properties of indium-doped aluminum antimonide. The most...

   Shafqat Nabi, Abdul Waheed Anwar, ... Kashif Nabi in Optical and Quantum Electronics

   Article 30 June 2023
   

8. Theoretical modeling of XBn T2SLs InAs/InAsSb/B-AlSb longwave infrared detector operating under thermoelectrical cooling

   The paper reports on the barrier longwave infrared nBnn ⁺ detector based on InAs/InAsSb ( x _Sb = 0.38) type-II superlattice operating under...

   P. Martyniuk, K. Michalczewski, ... Y. R. Wu in Optical and Quantum Electronics

   Article 20 January 2020
   

9. Modeling of temperature effects on band structure in type-II superlattices using an empirical tight-binding method

   The band edge energy and effective mass of type II superlattices on a (0 0 1) GaSb substrate at different temperatures have been investigated using...

   Xubo Zhu, Wanqi Jie, ... Zhenming Ji in Applied Physics A

   Article 21 June 2022
   

10. Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

    There is currently much activity toward the integration of mid-infrared semiconductor lasers on Si substrates for develo** a variety of smart,...

    Eric Tournié, Laura Monge Bartolome, ... Jean-Baptiste Rodriguez in Light: Science & Applications

    Article Open access 01 June 2022
    

11. First-principles calculations for optoelectronic properties of AlSb and GaSb under influence of spin–orbit interaction effect

    In this article, we present the first-principles calculations for electronic and optical properties of AlSb and GaSb in the zinc blende phase using...

    M. A. Ali, H. Aleem, ... G. Murtaza in Indian Journal of Physics

    Article 21 May 2019
    

12. Change of intermetallic phases and mechanical features in rapidly solidified hypereutectic Al–3Ni–3Sb alloy

    Rapidly solidified hypereutectic Al–3Ni–3Sb were successfully prepared by the technique of melt–spinning at different solidification rates. The...

    Ercan Karaköse, Mustafa Keskin in Applied Physics A

    Article 19 October 2021
    

13. Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region

    Abstract

    The photoluminescence spectra of waveguide AlSb/InAs/GaInSb/InAs/AlSb quantum-well heterostructures designed for the generation of radiation...

    V. V. Utochkin, M. A. Fadeev, ... V. I. Gavrilenko in Semiconductors

    Article 08 September 2020
    

14. Aluminium do** effects on physical properties of semiconductors InSb for optoelectronic devices: a computational insight

    In this study, first-principles numerical computations for zinc-blende ternary alloys (In _1−x Al _x Sb) are performed concerning elastic, structural,...

    S. Gagui, S. Ghemid, ... N. Baki in Optical and Quantum Electronics

    Article 02 December 2023
    

15. Mid-wavelength InAs/GaSb type-II superlattice barrier detector with nBn design and M barrier

    This study reports the performance of an InAs/GaSb type-II superlattices (T2SLs) detector with nBn structure for mid-wavelength infrared (MWIR)...

    Zhaojun Liu, Lianqing Zhu, ... **antong Zheng in Optoelectronics Letters

    Article 20 October 2023

16. Modelling to determine the optical properties of nanosized semiconducting compounds

    In the present paper, a theoretical model is used to study the optical properties of nanomaterials. The optical properties of nanosized...

    Monika Goyal, Pooja Chaturvedi in Pramana

    Article 15 October 2022
    

17. Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates

    Abstract

    GaSb films are grown by molecular-beam epitaxy using AlSb/As/Si transition layers on vicinal Si(001) substrates miscuted by 6° in (111) plane...

    M. O. Petrushkov, D. S. Abramkin, ... V. V. Preobrazhenskii in Semiconductors

    Article 04 December 2020
    

18. Sodium reservoir to compensate sodium loss for ultra-stable anode-less sodium metal batteries

    The potential application of anode-less sodium metal batteries (ALSBs) is severely affected by the irreversible depletion of sodium ions. Cathode...

    Wanhao Chen, **aowei Shen, ... Xuejun Liu in Applied Physics A

    Article 18 June 2024
    

19. Transverse effective charge, energy band structure and optical properties of nanostructured Al_xIn_1-xP_ySb_zAs_1-y-z alloy for the solar cells system

    The energy band gaps ( E _g ^L , E _g ^Γ and E _g ^X ) and electronic band structure in the pentanary Al _x In _{1- x} P _y Sb _z As _{1- y-z} semiconducting alloy are determined....

    Mohammed Alyami, O A Alfrnwani, Elkenany B Elkenany in Pramana

    Article 27 November 2023
    

20. Design of a high-sensitivity extended mid-wave infrared InAsSb-based nBn photodetector by utilizing barrier band engineering technique: an outstanding device for biosensing applications

    In the InAsSb-based barrier infrared photodetector, the unwanted valence band offset penalizes minority carrier transport in these devices,...

    Maryam Shaveisi, Peiman Aliparast in Optical and Quantum Electronics

    Article 18 July 2023