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1. A magnetically-induced Coulomb gap in graphene due to electron-electron interactions

   Insights into the fundamental properties of graphene’s Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an...

   Evgenii E. Vdovin, Mark T. Greenaway, ... Laurence Eaves in Communications Physics

   Article Open access 30 June 2023
   

2. A study on the dark and illuminated operation of Al/Si₃N₄/p-Si Schottky photodiodes: optoelectronic insights

   This work extensively investigates the operation of an Al/ Si ₃ N ₄ /p-Si Schottky-type photodiode under dark and varying illumination intensities. The...

   Ozge Surucu, Dilber Esra Yıldız, Murat Yıldırım in Applied Physics A

   Article Open access 16 January 2024
   

3. InSe/CrSe Interfaces Performed as Resistive Switches and Band Filters for Gigahertz/Terahertz Communication Technology Applications

   Herein chromium selenide (n-CrSe) nanosheets are deposited onto amorphous indium selenide (n-InSe) thin films by the thermal evaporation technique...

   Sabah E. Algarni, A. F. Qasrawi, Najla M. Khusayfan in Optical and Quantum Electronics

   Article 29 December 2023
   

4. New Designs of Laser Transitions in Terahertz Quantum–Cascade Lasers

   We study the band designs of terahertz quantum–cascade lasers (THz QCLs) with an active region of GaAs/Al _x Ga _{1− x} As quantum wells (QWs) by using the...

   D. V. Ushakov, A. A. Afonenko, ... R. A. Khabibullin in Radiophysics and Quantum Electronics

   Article 01 October 2022

5. Delocalization-Induced Interface Broadening in Strongly Interacting Systems

   In this chapter we illuminate unexpected effects of correlations on the structure and thermodynamics of interfaces and in turn phase separation,...

   Kristian Blom in Pair-Correlation Effects in Many-Body Systems

   Chapter 2023
   

6. Investigation of Peculiarities of Coherent Magnetotransport of InN Nanowires Using Scanning Gate Microscopy

   Abstract

   We present measurements of magnetotransport in InN nanowires in presence of a conductive atomic-force microscope probe at a temperature of T ...

   A. A. Zhukov, Ch. Volk, Th. Schäpers in Journal of Experimental and Theoretical Physics

   Article 01 January 2022
   

7. Review of Metal-Semiconductor Junctions

   This chapter reviews the important founding principles of MSJ diodes. It sets the stage for the presentation of parameter extraction methods in the...

   Richard Ocaya in Extraction of Semiconductor Diode Parameters

   Chapter 2024
   

8. Effect of illumination on electrical parameters of Au/(P3DMTFT)/n-GaAs Schottky barrier diodes

   Reverse- and forward-bias current–voltage ( I – V ) data of the Au/(P3DMTFT)/ n -GaAs Schottky barrier diodes (SBDs) were measured in dark and at under...

   Havva Elif Lapa, Ali Kökce, ... Şemsettin Altındal in Indian Journal of Physics

   Article 09 December 2019
   

9. Axion-de Sitter wormholes

   We construct wormholes supported by axion flux in the presence of a positive cosmological constant. The solutions describe compact, one-handle bodies...

   Sergio E. Aguilar-Gutierrez, Thomas Hertog, ... Thomas Van Riet in Journal of High Energy Physics

   Article Open access 30 November 2023

10. Vacuum decay and bubble nucleation in the anti-de Sitter black holes

    We study the vacuum decay and the bubble nucleation in the anti-de Sitter black holes. In the bubble nucleation spacetime, the interior and the...

    Ran Li, ** Wang in Journal of High Energy Physics

    Article Open access 19 September 2022

11. The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE

    Abstract

    We have studied the growth of GaN layers by the metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates at various reactor pressures,...

    A. V. Sakharov, W. V. Lundin, ... A. F. Tsatsulnikov in Technical Physics Letters

    Article 01 December 2020
    

12. A vertical optimization method for a simultaneous extraction of the five parameters characterizing the barrier height in the Mo/4H–SiC Schottky contact

    The temperature dependence of the parameters related to the barrier height inhomogeneities for Mo/4H–SiC Schottky diode in 298–498 K temperature...

    S. Toumi, Z. Ouennoughi in Indian Journal of Physics

    Article 08 February 2019
    

13. Current–Voltage, Capacitance–Voltage–Temperature, and DLTS Studies of Ni|6H-SiC Schottky Diode

    Abstract

    In this paper, we give a systematical description of Ni|6 H -SiC Schottky diode by current–voltage I ( V ) characteristics at room temperature...

    A. Rabehi, B. Akkal, ... A. Ziane in Semiconductors

    Article 01 April 2021
    

14. Photoluminescence properties of type I InAs/InGaAsSb quantum dots

    Abstract

    This paper presents a detailed study on the effect of the strain reducing layer (SRL) made with InGaAsSb on the photoluminescence (PL) of...

    Afef Ben Mansour, Rihab Sellami, ... Abdelmajid Salhi in The European Physical Journal B

    Article 11 June 2022
    

15. Optoacoustic Effects оf Laser Cavitation in a Liquid

    Abstract

    The work is devoted to the study of acoustic effects accompanying an optical breakdown in a liquid generated by focused laser radiation...

    A. V. Bulanov in Bulletin of the Russian Academy of Sciences: Physics

    Article 01 December 2023
    

16. Creation and Measurement of Microstructures of Ultrapure Materials

    As described in the previous chapter, transport measurements of the ultrapure delafossite metals are challenging. One method to mitigate some of the...

    Philippa H. McGuinness in Probing Unconventional Transport Regimes in Delafossite Metals

    Chapter 2022
    

17. Anisotropic Magnetization of an NbN Film

    Abstract

    The structural and magnetic properties of a niobium nitride (NbN) film prepared by reactive sputtering onto a quartz substrate are...

    D. M. Gokhfeld, N. E. Savitskaya, ... D. A. Balaev in Journal of Experimental and Theoretical Physics

    Article 01 June 2022
    

18. Features of Optical Transitions in GeSiSn/Si Multiple Quantum Wells

    Abstract

    Interband photoluminescence was obtained for structures with multiple quantum wells (MQWs) with different content of germanium and tin. Peak...

    V. A. Timofeev, V. I. Mashanov, ... O. S. Komkov in Optoelectronics, Instrumentation and Data Processing

    Article 01 December 2022
    

19. Polymer + Solvent Systems: Phase Diagrams, Interface Free Energies, and Nucleation

    Some theoretical concepts on polymer + solvent systems and Monte Carlo simulations of corresponding coarse-grained models are briefly reviewed. While...

    Kurt Binder, Marcus Müller, ... Luis González MacDowell in Advanced Computer Simulation

    Chapter
    

20. Optical and Electronic Properties of Passivated InP(001) Surfaces

    Abstract

    The effect of chemical passivation in solutions of ammonium sulfide (NH ₄ ) ₂ S on the optical and electronic properties of the surface n -InP...

    P. A. Dementev, E. V. Dementeva, ... M. V. Lebedev in Semiconductors

    Article 01 August 2021