Abstract
The effect of chemical passivation in solutions of ammonium sulfide (NH4)2S on the optical and electronic properties of the surface n-InP (001) is studied. It is shown that treatment in a 4% aqueous solution of (NH4)2S leads to a twofold decrease in the surface field and charges localized in this region. Treatment in a 4% alcohol solution (NH4)2S leads to a decrease in these parameters by a factor of 3, and, moreover, the barrier photovoltage decreases by a factor of 3.
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This work was partially supported by the Russian Foundation for Basic Research, project no. 20-03-00523.
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Translated by V. Bukhanov
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Dementev, P.A., Dementeva, E.V., Lvova, T.V. et al. Optical and Electronic Properties of Passivated InP(001) Surfaces. Semiconductors 55, 667–671 (2021). https://doi.org/10.1134/S1063782621080066
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DOI: https://doi.org/10.1134/S1063782621080066