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Pulsed Coherent Teragraphy: Imaging in the Terahertz Frequency Range
Principles of recording the amplitudes and phases of wave fields in the terahertz (THz) frequency range are considered and methodology and schemes...
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Multilayer Semiconductor Charged-Particle Spectrometers for Accelerator Experiments
The current state of studies in the field of development of multilayer semiconductor systems (semiconductor detector (SCD) telescopes), which allow...
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Electronically tunable spin-wave optoelectronic microwave oscillator
The characteristics of a spin-wave optoelectronic microwave oscillator are experimentally studied for the first time. The oscillator represents a...
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Photoinduced dynamics and femtosecond excitation of phonon modes in ferroelectric semiconductor Sn2P2S6
The ultrafast dynamics of electrons and phonons excited by femtosecond light pulses in ferroelectric semiconductor Sn 2 P 2 S 6 is investigated using the...
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Basic parameters of front-end microelectronic units of detector electronics
Results of the analysis of literature sources on development of microelectronic signal acquisition and processing units for ionizing radiation...
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Effect of microwave treatment on the luminescence properties of CdS and CdTe:Cl Single Crystals
The effect of microwave radiation on the luminescence properties of CdS and CdTe:Cl single crystals is studied. It is established that the exposure...
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Blue electroluminescence from AlN nanowhiskers
AlN nanowhiskers with an average diameter of 68 nm, for which a chemical analysis showed an Al: N ratio of about 1: 0.8 and a high content of oxygen...
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Double resonance fequency light shift compensation in optically oriented laser-pumped alkali atoms
The contributions of the vector and scalar components to the magnetically dependent microwave transition frequency light shift are analyzed and the...
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Application specific integrated circuits for ionizing-radiation detectors (review, part 1)
The purpose of this review is to give experts, who use electronic procedures in experiments or measurements in applied areas, whenever it is...
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Automation of experiments at Dubna Gas-Filled Recoil Separator
Approaches to solving the problems of automation of basic processes in long-term experiments in heavy ion beams of the Dubna Gas-Filled Recoil...
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Optical modification of semiconductor surfaces through the nanoripples formation using ultrashort laser pulses: Experimental aspects
We review the studies of nanoripples formation on various semiconductor species using ultrashort pulses and different experimental conditions. We...
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AND gate based on two-photon absorption in semiconductor optical amplifier
An all-optical logic AND gate based on two-photon absorption (TPA) in semiconductor optical amplifier (SOA) is simulated. By solving the rate...
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Laser beam induced current microscopy and photocurrent map** for junction characterization of infrared photodetectors
For non-destructive optical characterization, laser beam induced current (LBIC) microscopy has been developed into as a quantitative tool to examine...
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Apparatus for determining parameters of semiconductor structures by magnetic quantum effects and admittance spectroscopy
A universal combined apparatus is described, which allows investigations of magnetic quantum effects in 3D and 2D semiconductor structures under the...
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Specific features of the nonradiative relaxation of Er3+ ions in epitaxial Si structures
The specific features of the nonradiative relaxation of Er 3+ ions in Si:Er layers grown by sublimation molecular-beam epitaxy (SMBE) are studied. In...
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Determination of the diffusion length of minority charge carriers in a semiconductor from the dynamic nonequilibrium I–V characteristics of MIS structures
A method for determination of the diffusion length L de of minority charge carriers in a semiconductor from the dynamic nonequilibrium I – V ...
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Widely tunable chaotic fiber laser for WDM-PON detection
A widely tunable high precision chaotic fiber laser is proposed and experimentally demonstrated. A tunable fiber Bragg grating (TFBG) filter is used...
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A two-wave 1064/532-nm diode-pumped pulse-periodic YAG:Nd laser
A compact 1064/532-nm diode-pumped pulse-periodic YAG:Nd laser is described. Its parameters are as follows: the wavelength is 1064 nm, the pulse...
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ZnO nanorods: morphology control, optical properties, and nanodevice applications
Research interest in ZnO nanostructures derives from their excellent luminescent properties and availability of low cost fabricating and processing,...
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Photomodulation fourier transform infrared spectroscopy of semiconductor structures: Features of phase correction and application of method
A method for measuring photoreflectance (PR) by using a Fourier transform infrared (FTIR) spectrometer has been implemented. Features of application...