Abstract
The specific features of the nonradiative relaxation of Er3+ ions in Si:Er layers grown by sublimation molecular-beam epitaxy (SMBE) are studied. In Si:Er/Si diode structures containing precipitation-type emitting centers, a resonance photoresponse at the wavelength λ ≈ 1.5 μm is observed, which is indicative of the nonradiative relaxation of Er3+ ions via the energy back-transfer mechanism. Saturation of the erbium-related photocurrent is for the first time observed at high temperatures. This allows estimation of the concentration of Er centers that undergo relaxation via the above-mentioned back-transfer mechanism (N 0 ≈ 5 × 1016 cm−3). In terms of order of magnitude, the estimated concentration N 0 corresponds to the concentration of optically active Er ions upon excitation of the Si:Er layers by means of the recombination mechanism. The features of the nonradiative relaxation of Er3+ ions in Si:Er/Si structures with different types of emitting centers are analyzed.
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Original Russian Text © K.E. Kudryavtsev, D.I. Kryzhkov, A.V. Antonov, D.V. Shengurov, V.B. Shmagin, Z.F. Krasilnik, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 12, pp. 1626–1631.
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Kudryavtsev, K.E., Kryzhkov, D.I., Antonov, A.V. et al. Specific features of the nonradiative relaxation of Er3+ ions in epitaxial Si structures. Semiconductors 48, 1586–1591 (2014). https://doi.org/10.1134/S1063782614120112
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DOI: https://doi.org/10.1134/S1063782614120112