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Impact of Noise and Interface Trap Charge on a Heterojunction Dual-Gate Vertical TFET Device
Herein, a vertical T-shaped heterojunction tunnel field-effect transistor (TFET) structure is proposed. This paper explores the effect of the traps...
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Quantum Capacitance of a Dual-Gate Field-Effect Transistor
The calculations and measurements of quantum corrections to the capacitances between the gates of a field-effect transistor and its channel located...
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Enhancing Performance of Dual-Gate FinFET with High-K Gate Dielectric Materials in 5 nm Technology: A Simulation Study
The rapid advancement in nanoscale devices demands innovative gate dielectric materials to replace traditional Silicon dioxide. This paper...
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Noise Distortion Analysis of the Designed Heterodielectric Dual-Material Gate Do**less Nanowire FET
The do**less nanowire (NW) field-effect transistor (FET) has been discovered as a remedy to low drive current problems of junctionless NWFET. To...
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Design and estimation of GaAsSb/InGaAs hetero-junction double-dual gate vertical tunnel FET (HJ-VTFET) biosensor
In this work, a novel Gallium Arsenide Antimonide (GaAsSb)/Indium Gallium Arsenide (InGaAs) hetero-junction double-dual gate-gate stack Vertical...
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RF and linearity analysis of gate engineered dual heterojunction charge plasma TFET with improved ambipolarity
In this article, the impact of dual heterojunction in charge plasma TFET has been investigated in terms of DC, RF and linearity analysis. Using...
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Dimensional Effect on Analog/RF Performance of Dual Material Gate Junctionless FinFET at 7 nm Technology Node
Fully Depleted Silicon On Insulator (FDSOI) structures are present-era technology as it has enhanced control over Short Channel Effects in the...
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Ultra-low power neuromorphic obstacle detection using a two-dimensional materials-based subthreshold transistor
Accurate, timely and selective detection of moving obstacles is crucial for reliable collision avoidance in autonomous robots. The area- and...
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Dual P+-Wire Double-Gate Junctionless MOSFET with 10-nm Regime for Low Power Applications
The present study simulated and investigated a 3D double-gate junctionless transistor with a gate length of 10 nm and using dual P + -wire (DPW) on the...
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Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate
The threshold voltage of a field-effect transistor (FET) determines its switching and limits the scaling of the supply voltage in the logic gates....
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Carbon Nanotube Dual-Material Gate Devices for Flexible Electronics
Due to limited power supply and multifarious scenarios in practical applications, flexible electronic devices are expected to have low power...
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An Improved Z-Shaped Dual-Material-Gate DM-SDZ-TFET Biosensor for Label-Free Detection
In this paper, the sensitivity of a dielectric-modulated split-drain Z-shaped gate tunnel field-effect transistor (DM-SDZ-TFET) is investigated for...
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Ambipolar tribotronic transistor of MoTe2
Two-dimensional (2D) tribotronic devices have been successfully involved in electromechanical modulation for channel conductance and applied in...
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Design and Modeling of Gate Engineered Tunnel Field-Effect Transistor
With complementary metal-oxide semiconductors (CMOS) as the dominant invention, microelectronic production has witnessed a dramatic improvement in...
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A Novel Dual Gate Hetero Dielectric Hetero Material Reconfigurable FET
Reconfigurable FET (RFET) is a multi-threshold (MT) device that holds significant scope to replace CMOS in low power applications and field...
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Asymmetric two-dimensional ferroelectric transistor with anti-ambipolar transport characteristics
Two-dimensional (2D) ferroelectric transistors hold unique properties and positions, especially talking about low-power memories, in-memory...
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Bipolar synaptic organic/inorganic heterojunction transistor with complementary light modulation and low power consumption for energy-efficient artificial vision systems
Photoelectric synaptic transistors integrate optical sensing and synaptic functions into a single device, which has significant advantages in...
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Investigation of heavy ion radiation and temperature on junctionless tunnel field effect transistor
Junctionless tunnel field effect transistor (JLTFET) is one of the most promising devices due to its exceptional performance as it combines the...
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Van der Waals contacted WSe2 ambipolar transistor for in-sensor computing
Image sensors with an in-sensor computing architecture have shown great potential in meeting the energy-efficient requirements of emergent...
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Realization of flexible in-memory computing in a van der Waals ferroelectric heterostructure tri-gate transistor
Combining logical function and memory characteristics of transistors is an ideal strategy for enhancing computational efficiency of transistor...
