Enhancing Performance of Dual-Gate FinFET with High-K Gate Dielectric Materials in 5 nm Technology: A Simulation Study

Abstract

The rapid advancement in nanoscale devices demands innovative gate dielectric materials to replace traditional Silicon dioxide. This paper investigates the electrical behavior and performance of a dual-gate FinFET employing different high-K gate dielectric materials (Silicon dioxide, Hafnium oxide, Titanium oxide) through ATLAS 2D simulation in 5 nm technology. We analyze how these high-K gate dielectric materials influence the device, focusing on performance enhancement. The study highlights various key performance parameters ($I_{ON}$, $I_{OFF}$, $g_{m}$, $g_{ds}$, $R_{ON}$, TF, EV, $V_{IL}$, $V_{IH}$, $NM_{L}$, $NM_{H}$) and reveals a significant performance improvement with $\textrm{HfO}_2$ dielectric material in the proposed Dual-Gate FinFET. Achieving impressive performance parameters ($I_{ON}$: 21.59 mA, $I_{OFF}$: 21 $\mu$A, Maximum net Electric field: 1221290 V/cm, $g_{m(max)}$: 0.05187 S, $g_{ds(max)}$: 0.03462 S, $R_{ON(max)}$: 25.93 k$\Omega$, TFmax: 5.02, $Gain_{max}$: 90.233, $EV_{max}$: 67.532 V, $V_{IL}$: 0.21 V, $V_{IH}$: 0.4 V, $NM_{L}$: 198 V, $NM_{H}$: 600 V), this paper provides valuable insights for designing high-performance devices with $\textrm{HfO}_2$ dielectric material.