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Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction
A vertical GaN power MOSFET featuring an integrated fin-shaped non-junction diode (FDMOS) is proposed to improve reverse conduction and switching...
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Enhancement noise margin and delay time performance of novel punch-through nMOS for single-carrier CMOS
In this paper, we propose the use of punch-through nMOS (PTnMOS) as an alternative to pMOS in complementary metal oxide semiconductor (CMOS)...
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Improved 4H-SiC Metal–Semiconductor Field-Effect Transistors with Double-Symmetric-Step Buried Oxide Layer for High-Energy-Efficiency Applications
An improved 4H-SiC metal–semiconductor field-effect transistor (MESFET) with a double-symmetric-step buried oxide layer is proposed, and the...
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Analysis of Device Parameter Variations in In1−xGaxAs Based Gate Stacked Double Metal Surrounding Gate Nanowire MOSFET
The research focuses on the design and analysis of a Gate Stacked Double Metal Surrounding Gate Nanowire MOSFET (DMSG-NWFET) using In 1−x Ga x As as the...
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Charge Plasma-Based Phosphorene Tunnel FET Using a Hybrid Computational Method
In this paper, a charge plasma-based phosphorene double-gate tunnel FET (CP-BPDGTFET) is investigated. A hybrid simulation technique involving both...
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Sensitivity analysis of junctionless silicon NT-TFET and performance metrics comparison with the silicon NT-TFET
In this article, we investigated the sensitivity of the junctionless silicon nanotube tunnel field-effect transistor (JLSiNT-TFET). To accomplish...
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Impact of Negative Bottom Gate Voltage for Improvement of RF/Analog Performance in Asymmetric Junctionless Dual Material Double Gate MOSFET
Research on double-gate MOSFET has already exhibited several novel solutions of existing problems like reducing leakage current or short-channel...
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Heterogenous Gate Dielectric DLTFET: Reliability Perspective Against Degradation Mechanisms
Heterogeneous gate dielectric (HD) do**less n-type tunnel-FET (HD-DLTFET) is proposed with improved reliability performance against distinct drain...
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Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs
The presence of surface traps is an important phenomenon in AlGaN/GaN HEMT. The electrical and physical properties of these surface traps have been...
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Comparative investigation of low-power ferroelectric material embedded with different heterojunction vertical TFET structures
This paper basically proposes and compares three different configurations of ferroelectric oxide material on silicon body of vertical tunnel...
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Detection of biomolecules in dielectric modulated double metal below ferroelectric layer FET with improved sensitivity
In this work, we examined the double metal below ferroelectric layer FET that is double metal below negative capacitance field-effect transistor...
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Surface Potential and Drain Current 2D Analytical Modeling of Low Power Double Gate Tunnel FET
This submitted work presents the 2-dimensional analytical modeling of Tunnel FET’s in consideration with the inherent properties of dual modulation...
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Modeling and Simulation of Dual-Material Asymmetric Heterojunction Tunnel Field-Effect Transistors
Gardon Moore proposed the exponential increase in transistor packing density on integrated circuits (ICs). The semiconductor industry has managed to...
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Modeling and Simulation of CZTS Thin-Film Solar Cell for Efficiency Enhancement
CZTS solar cells have been utilized as a replacement for CIGS and CdTe solar cells in thin-film technology. With the better absorption coefficient of...
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A Junctionless Silicon Carbide Transistor for Harsh Environment Applications
Silicon carbide (SiC) is the material of choice for high-temperature, high-voltage, and other harsh environment applications in high-energy physics,...
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Design and Optimization of a Heterojunction (Ge/Si) Vertical-Tunnel Field Effect Transistor (HV-TFET) with a Doped Bar for Low-Power Applications
Tunnel field effect transistors (TFETs) are known for lower power requirements than MOSFETs due to their utilization of the band-to-band tunneling...
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Vertical GaN Reverse Trench-Gate Power MOSFET and DC-DC Converter
A vertical GaN reverse trench-gate power MOSFET (RT-MOSFET) device is proposed. This Vertical RT-MOSFET features the negative incline of...
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Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs
Evidence of microscopic inhomogeneities of the side source/drain contacts in 300 mm wafer integrated MoS 2 field-effect transistors is presented. In...
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Gate Work Function-Engineered Graded-Channel Macaroni MOSFET: Exploration of Temperature and Localized Trapped Charge-Induced Effects with GIDL Analysis
The current research paper presents the analytical modelling and simulation-based device characteristics of a dual-material (DM) gate-graded Channel...
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